IXYS IXGA12N60C, IXGP12N60C Datasheet

HiPerFASTTM IGBT

IXGA 12N60C
IXGP 12N60C

I

V

V

CES

C25

CE(sat)

t

fi(typ)

= 600 V
=24 A

= 2.7 V
=55 ns

Symbol Test Conditions Maximum Ratings
V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

M

d

Weight 4g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C24A
TC= 90°C12A
TC= 25°C, 1 ms 48 A

= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 24 A

GE

CES

TC= 25°C 100 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.

TO-263 AA (IXGA)

TO-220 AB
(IXGP)

Features

•Very high freqency IGBT

•New generation HDMOS

•International standard package

JEDEC TO-220AB and TO-263AA

•High peak current handling capability

G

E

G

C

E

G = Gate C = Collector
E = Emitter TAB = Collector

↑ C (tab)

TM

process

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

© 2002 IXYS All rights reserved

IC= 250 µA, VGE = 0 V 600 V
IC= 250 µA, VGE = V

VCE = 0.8, V
VGE= 0 V TJ = 125°C1mA

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

CES

, VGE = 15 2.1 2.7 V

CE90

GE

TJ = 25°C 200 µA

2.5 5.0 V

Applications

• PFC circuits

• AC motor speed control

• DC servo & robot drives

• Switch-mode and resonant-mode

power supplies

• High power audio amplifiers

Advantages

• Fast switching speed

• High power density

97534B (2/02)

IXGA12N60C IXGP12N60C

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified) Min. Typ. Max.

(T

J

g

fs

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 7 11 S

C90

TO-220 AB Dimensions

C
C
C

Q
Q
Q

t
t
t
t

E

t
t
E
t
t

E

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

860 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 64 pF

15 pF

32 nC

IC= I

, VGE = 15 V, VCE = 0.5 V

C90

CES

10 nC
10 nC

Inductive load, TJ = 25

= I

I

C

VCE= 0.8 V

, VGE = 15 V, L = 300 µH

C90

, RG = R

CES

°°

°C

°°

= 18 Ω

off

Remarks: Switching times may
increase for V
higher T

(Clamp) > 0.8 V

CE

or increased R

J

G

CES

,

20 n s
20 n s
60 n s
55 n s

0.09 mJ
20 n s

Inductive load, TJ = 125

IC= I
V

CE

, VGE = 15 V, L = 300 µH

C90

= 0.8 V

, RG = R

CES

Remarks: Switching times may
increase for V
higher T

(Clamp) > 0.8 V

CE

or increased R

J

°°

°C

°°

= 18 Ω

off

G

CES

20 n s

0.15 mJ
85 180 ns

,

85 180 ns

0.27 0.60 m J

Pins: 1 - Gate 2 - Collector

3 - Emitter 4 - Collector

Bottom Side

TO-263 AA Outline

R

thJC

R

thCK

Min. Recommended Footprint

(Dimensions in inches and mm)

1.25 K/W

0.25 K/W

1. Gate

2. Collector

3. Emitter

4. Collector
Bottom Side

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BS C .100 BSC

L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025