IXYS IXGP12N100U1, IXGP12N100AU1, IXGA12N100U1, IXGA12N100AU1 Datasheet

IGBT

Combi Pack

Preliminary Data Sheet

V

CES

I

C25

V

CE(sat)

IXGA/IXGP12N100U1 1000 V 24 A 3.5 V
IXGA/IXGP12N100AU1 1000 V 24 A 4.0 V

Symbol Test Conditions Maximum Ratings
V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 V

P

C

T

J

T

JM

T

stg

M

d

TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGE = 1 MW 1000 V

Continuous ±20 V
Transient ±30 V

TC= 25°C24A
TC= 90°C12A
TC= 25°C, 1 ms 48 A

= 15 V, TVJ = 125°C, RG = 150 W ICM = 24 A

GE

CES

TC= 25°C 100 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque with screw M3 0.45/4 Nm/lb.in.

Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight 4g
Maximum lead temperature for soldering 30 0 °C

1.6 mm (0.062 in.) from case for 10 s

TO-220AB(IXGP)

TO-263 AA (IXGA)

Features

• International standard packages
JEDEC TO-220AB and TO-263AA

• IGBT with antiparallel FRED in one
package

• Second generation HDMOS

• Low V

- for minimum on-state conduction

• MOS Gate turn-on

- drive simplicity

• Fast Recovery Expitaxial Diode (FRED)

- soft recovery with low I

CE(sat)

losses

G

C

E

G

E

RM

C (TAB)

TM

process

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BV
V

I

CES

CES

GE(th)

IC= 3 mA, VGE = 0 V 1000 V
IC= 250 mA, VGE = V

VCE = 0.8, V

CES

GE

TJ = 25°C 300 mA

2.5 5.5 V

VGE= 0 V TJ = 125°C3mA

I
V

GES

CE(sat)

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 12N100 3.5 V

CE90

12N100A 4.0 V

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode

power supplies

Advantages

• Easy to mount with one screw

• Space savings (two devices in one

package)

• Reduces assembly time and cost

• High power density

95592A (3/97)

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IXGA12N100U1 IXGP12N100U1
IXGA12N100AU1 IXGP12N100AU1

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

g

fs

IC= I

; VCE = 10 V, 6 10 S

C90

Pulse test, t £ 300 ms, duty cycle £ 2 %

Q
Q
Q

t
t
t
t

E
t

t
E
t
t

E

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

IC= I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, TJ = 25°C

I

= I

C

V

, VGE = 15 V, L = 300 mH

C90

= 800 V, RG = R

CE

= 120 W

off

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
higher T

or increased R

J

G

CES

Inductive load, TJ = 125°C

I

= I

C

V

CE

, VGE = 15 V, L = 300 mH

C90

= 800 V, RG = R

off

= 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
higher T

or increased R

J

G

CES

12N100A 500 700 ns
12N100 800 1000 ns

,

12N100A 4 6 mJ

12N100A 950 ns

,

CES

12N100 1250 ns
12N100A 8 mJ

65 90 nC

820nC

24 45 nC

100 ns
200 ns
850 1000 ns

100 ns
200 ns

1.1 mJ

900 ns

12N100 10 mJ

R

thJC

R

thCK

1.25 K/W

0.25 K/W

TO-220 AB (IXGP) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630

C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161

E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125

G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230

J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC

M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055

Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110

Reverse Diode (FRED) Characteristic Values

= 25°C, unless otherwise specified)

(T

J

Symbol Test Conditions Min. Typ. Max.
V

F

IF=8A, VGE = 0 V, 2.75 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

I

RM

t

rr

R

thJC

IF= I
VR= 100 V, TJ = 125°C 140 ns
I

F

, VGE = 0 V, -diF/dt = 100 A/ms 6.5 A

C90

= 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C5060ns

2.5 K/W

Min. Recommended Footprint

TO-263 AA (IXGA) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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