IXYS IXGA10N60, IXGA10N60A, IXGH10N60, IXGH10N60A, IXGP10N60 Schematics
...
Preliminary data
Low V
CE(sat)
High speed IGBT
IGBT
IXGA/IXGP/IXGH10N60
IXGA/IXGP/IXGH10N60A
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight TO-263 AA 2 g
Symbol Test Conditions Characteristic Values
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C20A
TC= 90°C10A
TC= 25°C, 1 ms 40 A
= 15 V, TVJ = 125°C, RG = 150 Ω ICM = 20 A
GE
CES
TC= 25°C 100 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.
TO-247 AD 6 g
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IC= 250 µA, VGE = 0 V 600 V
IC= 250 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C1mA
GE
CES
GE
TJ = 25°C 200 µ A
2.5 5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 10N60 2.5 V
C90
10N60A 3.0 V
V
CES
I
C25
V
CE(sat)
600 V 20 A 2.5 V
600 V 20 A 3.0 V
TO-220AB(IXGP)
G
C
E
TO-263 AA (IXGA)
G
E
TO-247 AD (IXGH)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
International standard packages
JEDEC TO-263 AA surface
mountable and JEDEC TO-247 AD
l
2nd generation HDMOSTM process
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings, TO-263 AA
l
Facilitates automated assembly
l
Reduces assembly time and cost
l
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
l
High power density
91510G (9/96 )
C (TAB)
C (TAB)
IXGA/ IXGP/ IXGH10N60
IXGA/ IXGP/ IXGH10N60A
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 4 8 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CE
,
CES
CE
, higher
CES
G
°°
°C
°°
10N60A 300 ns
10N60A 0.6 mJ
G
°°
°C
°°
10N60 570 2000 ns
10N60A 360 600 ns
10N60 2.0 mJ
10N60A 1.2 mJ
Inductive load, TJ = 25
I
= I
, VGE = 15 V, L = 100 µH
C
C90
V
= 0.8 V
CE
= R
R
G
Remarks: Switching times
CES
= 150 Ω
off
,
may increase for V
(Clamp) > 0.8 • V
higher T
or increased R
J
Inductive load, TJ = 125
= I
, VGE = 15 V,
I
C
C90
L = 100 µH
V
CE
R
= R
G
= 0.8 V
CES
= 150 Ω
off
,
Remarks: Switching times
may increase for V
(Clamp) > 0.8 • V
T
or increased R
J
min. typ. max.
CES
750 pF
30 pF
50 70 nC
15 25 nC
25 45 nC
100 ns
200 ns
0.4 mJ
600 ns
100 ns
200 ns
1mJ
900 1500 ns
1.25 K/W
0.25 K/W
IXGA/P/IXGH 10N60 / 10N60A characteristic curves are located in the
IXGH 10N60U1 and IXGH 10N60AU1 data sheet.
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
∅ P
e
b11.65 2.13 .065 .084
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 14.93 0.500 0.580
B 14.23 16.50 0.560 0.650
C 9.66 10.66 0.380 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.29 2.79 0.090 0.110
G 1.15 1.77 0.045 0.070
H 2.79 6.35 0.110 0.250
J 0.64 0.89 0.025 0.035
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 0.64 1.39 0.025 0.055
Q 0.51 0.76 0.020 0.030
R 2.04 2.49 0.080 0.115
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Min. Recommended Footprint
(Dimensions in inches and (mm))
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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