IXYS IXFX55N50, IXFX50N50 Datasheet

HiPerFET

TM

V

DSS

I

D25

R

DS(on)

Power MOSFETs

IXFX 50N50 500 V 50 A 100 m
IXFX 55N50 500 V 55 A 80 m

Single Die MOSFET

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight 6 g

T

= 25°C to 150°C 500 V

J

T

= 25°C to 150°C; RGS = 1 MΩ 500 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C 50N50 50 A

C

T

= 25°C, pulse width limited by T

C

T

= 25°C 50N50 50 A

C

T

= 25°C60mJ

C

T

= 25°C3J

C

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

T

= 25°C 520 W

C

DSS

55N50 55 A
50N50 200 A

JM

55N50 220 A

55N50 55 A

5 V/ns

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in.) from case for 10 s 300 °C

Mounting torque 1.13/10 Nm/lb.in.

t

PLUS 247
(IXFX)

Features

l

International standard package

l

Low R

l

Rugged polysilicon gate cell structure

l

Unclamped Inductive Switching (UIS)
rated

l

Low package inductance

- easy to drive and to protect

l

Fast intrinsic rectifier

Applications

≤ ≤

≤ 250 ns

≤ ≤

rr

TM

G

D

HDMOSTM process

DS (on)

ΩΩ

Ω

ΩΩ
ΩΩ

Ω

ΩΩ

D (TAB)

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

V
V

I

I

R

DSS

GS(th)

GSS

DSS

DS(on)

J

V

= 0 V, ID = 1mA 500 V

GS

V

= VGS, ID = 8mA 2.5 4.5 V

DS

V

= ±20 V, VDS = 0 ±200 nA

GS

VDS= V
V

DSS

= 0 V T

GS

VGS= 10 V, ID = 0.5 I

T

= 25 °C25µA

J

= 125°C2mA

J

D25

50N50 100 mΩ

min. typ. max.

Note 1 55N50 80 m Ω

© 2002 IXYS All rights reserved

l

DC-DC converters

l

Battery chargers

l

Switched-mode and resonant-mode
power supplies

l

DC choppers

l

AC motor control

l

Temperature and lighting controls

Advantages

l

PLUS 247

TM

package for clip or spring

mounting

l

Space savings

l

High power density

98507D (04/02)

IXFX 50N50
IXFX 55N50

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

J

VDS= 10 V; ID = 0.5 I

Note 1 45 S

D25

VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 pF

VGS = 10 V, VDS = 0.5 V

R

= 2 Ω (External), 120 ns

G

VGS = 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

, ID = 0.5 I

DSS

min. typ. max.

9400 pF

460 pF

45 ns

D25

60 ns

45 ns

330 nC

D25

55 nC

155 nC

0.15 K/W

0.22 K/W

Source-Drain Diode Characteristic Values

(T

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

VGS= 0 V 55N50 55 A

J

50N50 50 A

PLUS 247TM Outline

Terminals: 1 - Gate

Dim . Millimeter Inches

2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

2.29 2.54 .090 .100

A

1

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055
b

1.91 2.13 .075 .084

1

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190

I

SM

V

SD

t

rr

Q

RM

I

RM

Repetitive; 55N50 220 A
pulse width limited by T

JM

50N50 200 A

IF = IS, VGS = 0 V Note 1 1.5 V

I

=25 A,-di/dt = 100 A/µs, V

F

= 100 V

R

Note: 1.Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

250 ns

1.0 µC

10 A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025