IXYS IXFX26N90, IXFK25N90, IXFX25N90 Datasheet
HiPerFET
TM
Power MOSFETs
V
DSS
I
DSS
R
DS(on)
t
rr
IXFK/IXFX 26N90
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight PLUS 247 6 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 900 V
TJ= 25°C to 150°C; RGS = 1 MW 900 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 26N90 26 A
TC= 25°C, pulse width limited by T
TC= 25°C 26N90 26 A
TC= 25°C64mJ
TC= 25°C3J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ£ 150°C, RG = 2 W
TC= 25°C 560 W
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting torque TO-264 0.4/6 Nm/lb.in.
TO-264 10 g
(T
V
= 0 V, ID = 3mA 900 V
GS
V
= VGS, ID = 8mA 3.0 5.0 V
DS
VGS = ±20 V, VDS = 0 ±200 nA
VDS = 0.8 •V
= 0 V TJ = 125°C2mA
V
GS
VGS = 10 V, ID = 0.5 • I
Note 1 25N90 0.33 W
DSS
D25
TJ = 25°C 100 mA
26N90 0.3 W
IXFK/IXFX 25N90
25N90 25
26N90 104 A
JM
25N90 100
25N90 25
DSS
-55 ... +150 °C
-55 ... +150 °C
= 25°C, unless otherwise specified)
J
min. typ. max.
5 V/ns
150 °C
900 V 26 A 0.30 W 250 ns
900 V 25 A 0.33 W 250 ns
PLUS 247
TO-264 AA (IXFK)
G = Gate D = Drain
S = Source TAB = Drain
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
mounting
• Space savings
• High power density
TM
(IXFX)
G
D
S
G
D
S
HDMOSTM process
DS (on)
TM
package for clip or spring
(TAB)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98553D (9/99)
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IXFK 25N90 IXFX 25N90
IXFK 26N90 IXFX 26N90
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
r
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
Note 1 18 28 S
D25
8.7 10.8 nF
VGS = 0 V, VDS = 25 V, f = 1 MHz 800 1000 pF
300 375 pF
60 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
35 ns
RG = 1 W (External), 130 ns
24 ns
240 nC
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
56 nC
107 nC
0.15 K/W
0.22 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
PLUS247
TM
(IXFX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 26N90 26 A
Repetitive; 26N90 104 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
IF = IS, -di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
25N90 25
25N90 100
250 ns
1.4 mC
10 A
TO-264 AA (IXFK) Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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