IXYS IXFK 24N120Q2, IXFX 24N120Q2 Service Manual
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Advance Technical Data
HiPerFET
TM
Power MOSFETs
IXFK 24N120Q2
IXFX 24N120Q2
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic Rg, low t
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1200 V
Continuous ±30 V
Transient ±40 V
TC= 25°C24A
TC= 25°C, pulse width limited by T
TC= 25°C12A
TC= 25°C30mJ
TC= 25°C 4.0 J
rr
g
JM
96 A
V
DSS
I
D25
R
DS(on)
t
PLUS 247TM (IXFX)
= 1200 V
= 24 A
= 0.65
≤ ≤
≤ 300 ns
≤ ≤
rr
G
D
ΩΩ
Ω
ΩΩ
D (TAB)
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight PLUS-247 6 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 2 Ω
TC= 25°C 830 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque TO-264 0.9/6 Nm/lb.in.
VGS= 0 V, ID = 3mA 1200 V
VDS= VGS, ID = 8 mA 2.5 5.0 V
VGS= ±30 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125°C2mA
VGS= 10 V, ID = 0.5 • I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
TJ = 25°C50µA
D25
, 20 V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
TO-264 10 g
(TJ = 25°C, unless otherwise specified)
min. typ. max.
0.65 Ω
TO-264 AA (IXFK)
G
D
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Double metal process for low gate
resistance
z
International standard packages
z
Epoxy meet UL 94 V-0, flammability
classification
z
Avalanche energy and current rated
z
Fast intrinsic Rectifier
Advantages
z
Easy to mount
z
Space savings
z
High power density
D (TAB)
© 2004 IXYS All rights reserved
DS99185(05/04)
IXFK 24N120Q2
IXFX 24N120Q2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 • I
, pulse test 15 25 S
D25
8200 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 560 pF
110 pF
22 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
13 ns
RG = 1.0 Ω (External), 60 ns
12 ns
180 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
45 nC
80 nC
0.15 K/W
TO-264 0.15 K/W
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
I
S
I
SM
VGS= 0 V 24 A
Repetitive; pulse width limited by T
J
JM
96 A
PLUS 247TM Outline
Terminals: 1 - Gate
Dim. Millimeter Inches
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A
1.91 2.16 .075 .085
2
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
TO-264 AA Outline
V
SD
t
rr
Q
RM
I
RM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
300 ns
I
= 25A, -di/dt = 100 A/µs, VR = 100 V
F
1 µC
10 A
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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