IXYS IXFT6N100F, IXFH6N100F Datasheet

High Voltage
IGBT with Diode

IXSK 35N120BD1
IXSX 35N120BD1

V
I

C25

CES

= 1200 V
= 70 A

Short Circuit SOA Capability

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load @ 0.8 V

t

SC

(SCSOA) RG = 5 W, non repetitive

P

C

T

J

T

JM

T

stg

T

L

Weight TO-264 10 g

TJ= 25°C to 150°C 1200 V

TJ= 25°C to 150°C; RGE = 1 MW 1200 V

Continuous ±20 V

Transient ±30 V

TC= 25°C70A

TC= 90°C35A

TC= 25°C, 1 ms 140 A

= 15 V, TJ = 125°C, RG = 5 W ICM = 90 A

GE

CES

VGE= 15 V, VCE = 720 V, TJ = 125°C 10ms

TC= 25°C IGBT 300 W

Diode 190 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 °C

PLUS247 6 g

V

CE(SAT)

= 3.6 V

TO-264 AA
(IXSK)

G

C

E

PLUS TO-247

TM

(IXSX)

G

C

E

G = Gate, C = Collector,
E = Emitter, TAB = Collector

C (TAB)

Features

 Hole-less TO-247 package for clip

mounting

 High frequency IGBT and anti-parallel

FRED in one package

 Low V

CE(sat)

- for minimum on-state conduction
losses

 MOS Gate turn-on

- drive simplicity

 Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

RM

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

 VCE= 0.8  V

CES

I

GES

V

CE(sat)

 Device must be heatsunk for high temperature measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved

IC= 3 mA, VGE = 0 V 1200 V

IC= 250 mA, VCE = V

VGE= 0 V TJ = 125°C3mA

CES

GE

36V

1mA

VCE= 0 V, VGE = ±20 V ±100 nA

IC= I

, VGE = 15 V 3. 6 V

C90

Applications

 AC motor speed control
 DC servo and robot drives
 DC choppers
 Uninterruptible power supplies (UPS)
 Switch-mode and resonant-mode

power supplies

Advantages

 Space savings (two devices in one

package)

 Reduces assembly time and cost
 High power density

98733 (7/00)

IXSX 35N120BD1
IXSX 35N120BD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

fs

IC= I

; VCE = 10 V, 16 23 S

C90

Pulse test, t £ 300 ms, duty cycle £ 2 %

C

C

C

Q

Q

Q

t

t

t

t

E

t

t

E

t

t

E

R

R

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

VCE = 25 V, VGE = 0 V, f = 1 MHz 315 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, T

IC = I

, VGE = 15 V,

C90

VCE = 0.8 V
Switching times may increase for V
(Clamp) > 0.8  V
increased R

J

, RG = 5.0 W

CES

G

= 2 5°C

, higher TJ or

CES

CES

CE

Inductive load, TJ = 1 25°C

IC = I

, VGE = 15 V,

C90

VCE = 0.8 V
Switching times may increase for V
(Clamp) > 0.8  V
increased R

, RG = 5.0 W

CES

G

, higher TJ or

CES

CE

3600 pF

75 pF

120 nC

33 nC

49 nC

36 ns

27 ns

160 300 ns

180 300 ns

59mJ

38 ns

29 ns

6mJ

240 ns

340 ns

9mJ

0.42 K/W

0.15 K/W

TO-247 HOLE-LESS Outline

TO-264 AA Outline

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

RM

t

rr

R

thJC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

IF = 130A, VGE = 0 V, Pulse test, 2.75 V
t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C 1.85 V

IF= 130A, VGE = 0 V, -diF/dt = 100 A/msTJ =100°C 7 14.3 A

VR = 100 V

IF= 1 A; -di/dt = 200 A/ms; VR = 30 V 40 n s

0.65 K/W

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025