IXYS IXFT68N20, IXFH74N20, IXFH68N20, IXFT74N20 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
IXFH/IXFT 68N20 200 V 68 A 35 mW
IXFH/IXFT 74N20 200 V 74 A 30 mW
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight 6 g
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MW 200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 68N20 68 A
TC= 25°C, pulse width limited by T
TC= 25°C 68N20 68 A
TC= 25°C45mJ
S
TJ £ 150°C, RG = 2 W
TC= 25°C 360 W
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
, HDMOSTM Family
rr
£ IDM, di/dt £ 100 A/ms, VDD £ V
74N20 74 A
68N20 272 A
JM
74N20 296 A
74N20 74 A
,5V/ns
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
trr £ 200 ns
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
International standard packages
Low R
Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2000 IXYS All rights reserved
VGS= 0 V, ID = 1 mA 20 0 V
VDS= VGS, ID = 4 mA 2 4 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C 200 mA
74N20 30 m W
68N20 35 m W
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface package
High power density
97522C (8/00)
IXFH 68N20 IXFH 74N20
IXFT 68N20 IXFT 74N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 35 45 S
D25
5400 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 1160 pF
560 pF
40 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
55 ns
RG= 2 W (External) 120 n s
26 ns
280 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
39 nC
135 nC
0.35 K/W
(TO-247 Package) 0.25 K/W
IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/
IXFK80N20 data sheet.
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 68N20 68 A
Repetitive; 68N20 272 A
pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = 2 5A
-di/dt = 100 A/ms,
VR = 100 V
J
74N20 74 A
74N20 296 A
JM
0.85 mC
8A
200 ns
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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