IXYS IXFT58N20Q, IXFH58N20Q Datasheet
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
Preliminary data sheet
IXFH 58N20Q
IXFT 58N20Q
V
I
D25
R
DSS
DS(on)
= 200 V
=58A
= 40 mW
trr £ 200 ns
g
Symbol Test Conditions Maximum Ratings
T
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
= 25°C to 150°C 200 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 200 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C58A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C58A
C
T
= 25°C30mJ
C
T
= 25°C 1.0 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 300 W
C
JM
, 5 V/ns
DSS
232 A
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified) Min. Typ. Max.
J
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
VGS= 0 V, I
= 250 µA 200 V
D
VDS= VGS, ID = 4 mA 2.0 4.0 V
V
= ±20 V
GS
VDS= V
V
= 0 V T
GS
VGS= 10 V, ID = 0.5 I
DSS
, V
= 0 ±100 nA
DC
DS
T
= 25°C25µA
J
= 125°C1mA
J
D25
40 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-268 (D3) (IXFT) Case Style
G
S
(TAB)
TO-247 AD
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
l
IXYS advanced low Qg process
l
International standard packages
l
Low gate charge and capacitance
- easier to drive
- faster switching
l
Low R
l
DS (on)
Unclamped Inductive Switching (UIS)
rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
© 1999 IXYS All rights reserved
98523A (5/99)
IXFH 58N20Q
IXFT 58N20Q
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
, pulse test 24 34 S
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz 870 pF
VGS = 10 V, VDS = 0.5 V
R
= 1.5 Ω (External) 40 n s
G
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
, ID = 0.5 I
DSS
D25
D25
(TO-247) 0.25 K/W
Min. Typ. Max.
3600 pF
280 pF
20 ns
40 ns
13 ns
98 140 nC
25 35 nC
45 70 nC
0.42 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS = 0 V 58 A
Repetitive; 232 A
IF = IS, VGS = 0 V, 1.5 V
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
TO-268 Outline
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
t
rr
Q
RM
I
RM
IF = I
-di/dt = 100 A/µs, VR = 100 V 0.7 µC
S
200 ns
7A
Min. Recommended Footprint
Dimensions in mm and inches
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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