IXYS IXFT50N20 Service Manual

查询IXFH50N20供应商查询IXFH50N20供应商

HiPerFET
Power MOSFETs

TM

IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20

N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-204 = 18 g, TO-247 = 6 g

Symbol Test Conditions Characteristic Values

V

DSS

V

GS(th)

I

GSS

I

DSS

TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MW 200 V

Continuous ±20 V
Transient ±30 V

TC= 25°C 42N20 42 A

TC= 25°C, pulse width limited by T

TC= 25°C 42N20 42 A

TC= 25°C30mJ

£ IDM, di/dt £ 100 A/ms, VDD £ V

S

TJ £ 150°C, RG = 2 W
TC= 25°C 300 W

1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.

VGS= 0 V, ID = 250 mA 200 V
VDS= VGS, ID = 4 mA 2 4 V

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V

VGS= 0 V TJ = 125°C1mA

DSS

TJ = 25°C 200 mA

IXFH/IXFT58N20

50N20 50 A
58N20 58 A
42N20 168 A

JM

50N20 200 A
58N20 232 A

50N20 50 A
58N20 58 A

, 5 V/ns

DSS

-55 ... +150 °C
150 °C

-55 ... +150 °C

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

DSS

I

D25

R

DS(on)

200 V 42 A 60mW
200 V 50 A 45mW
200 V 58 A 40mW

t

TO-247 AD (IXFH)

TO-268 (D3) Case Style

TO-204 AE (IXFM)

G = Gate, D = Drain,
S = Source, TAB = Drain

Features

• International standard packages

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)
rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole)

• High power surface mountable package

• High power density

£ 200 ns

rr

G

S

HDMOSTM process

DS (on)

(TAB)

(TAB)

S

G

D

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

91522H (2/98)

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IXFH/IXFM42N20 IXFH/IXFM58N20 IXFT50N20
IXFH/IXFM50N20 IXFT58N20

Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

R

DS(on)

VGS= 10 V, ID = 0.5 I

D25

42N20 0.060 W
50N20 0.045 W
58N20 0.040 W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)
r
d(off)
f

g(on)
gs
gd

thJC
thCK

VDS= 10 V; ID = 0.5 I

, pulse test 20 32 S

D25

4400 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 800 pF

285 pF

18 25 ns

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

15 20 ns

RG= 1 W (External) 72 90 ns

16 25 ns

190 220 nC

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

35 50 nC
95 110 nC

0.42 K/W

(TO-247 and TO-204 Case styles) 0.25 K/W

Source-Drain Diode Characteristic Values

= 25°C, unless otherwise specified)

(T

Symbol Test Conditions Min. Typ. Max.
I

S

VGS= 0 V 42N20 42 A

J

50N20 50 A
58N20 58 A

I

SM

V

SD

t

rr

Q

RM

I

RM

TO-268AA (D

Repetitive; 42N20 168 A
pulse width limited by T

JM

50N20 200 A
58N20 232 A

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

TJ = 25°C 200 ns

IF = 25A,

-di/dt = 100 A/ms,
VR = 100 V

TJ = 125°C 300 ns
TJ = 25°C 1.5 mC

TJ = 125°C 2.6 mC
TJ = 25°C19 A

TJ = 125°C23 A

3

PAK)

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

2.7 2.9 .106 .114

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

13.3 13.6 .524 .535

E

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-204 AE (IXFM) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 38.61 39.12 1.520 1.540
B - 22.22 - 0.875

C 6.40 11.40 0.252 0.449
D 1.45 1.60 0.057 0.063

E 1.52 3.43 0.060 0.135
F 30.15 BSC 1.187 BSC

G 10.67 11.17 0.420 0.440
H 5.21 5.71 0.205 0.225

J 16.64 17.14 0.655 0.675
K 11.18 12.19 0.440 0.480

Q 3.84 4.19 0.151 0.165
R 25.16 26.66 0.991 1.050

Min. Recommended Footprint

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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