IXYS IXFH4N100Q, IXFT4N100Q Datasheet
HiPerFET
TM
Power MOSFETs
Q-Class
IXFH 4N100Q
IXFT 4N100Q
V
DSS
I
D25
R
DS(on)
= 1000 V
= 4 A
= 3.0 W
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MW 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 4 A
TC= 25°C, pulse width limited by T
JM
16 A
TC= 25°C 4 A
TC= 25°C 20mJ
700 mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
T
£ 150°C, RG = 2 W
J
, 5 V/ns
DSS
TC= 25°C 150 W
-55 to +150 °C
150 °C
-55 to +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
trr £ 250 ns
TO-247 AD (IXFH)
G
D
S
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
IXYS reserves the right to change limits, test conditions, and dimensions.
VGS= 0 V, ID = 1 mA 1000 V
VDS= VGS, ID = 1.5 mA 3.0 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C50mA
3.0 W
© 2000 IXYS All rights reserved
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low R
• Unclamped Inductive Switching (UIS)
DS (on)
rated
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
98648A (03/24/00)
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IXFH 4N100Q
IXFT 4N100Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 • I
VGS= 0 V, VDS = 25 V, f = 1 MHz 120 pF
VGS= 10 V, VDS = 0.5 • V
RG = 4.7 W (External), 32 ns
VGS= 10 V, VDS = 0.5 • V
(TO-247) 0.25 K/W
, pulse test 1.5 2.5 S
D25
1050 pF
30 pF
17 ns
, ID = 0.5 • I
DSS
D25
15 ns
18 ns
39 nC
, ID = 0.5 • I
DSS
D25
9nC
22 nC
0.8 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 4 A
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
I
SM
V
SD
t
rr
Q
RM
I
RM
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.52 mC
TO-268AA (D3 PAK)
JM
1.8 A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
16 A
250 ns
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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