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Advanced Technical Information
HiPerFET
TM
Power MOSFETs
IXFH 40N50Q
IXFT 40N50Q
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±30 V
Transient ±40 V
T
= 25°C40A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C40A
C
T
= 25°C 50mJ
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 50 0 W
C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
TO-268 4 g
VGS= 0 V, I
= 250 µA 500 V
D
VDS= VGS, ID = 4 mA 2.5 4.5 V
V
= ±30 V
GS
VDS= V
VGS= 0 V T
DC
DSS
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
High dv/dt
g,
JM
160 A
2.0 mJ
, 20 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
(T
= 25°C, unless otherwise specified)
J
, V
= 0 ±100 nA
DS
T
= 25°C25µA
J
= 125°C1mA
J
D25
min. typ. max.
0.14 Ω
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 250 ns
≤ ≤
rr
= 500 V
= 40 A
= 0.14
ΩΩ
Ω
ΩΩ
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
- faster switching
z
International standard packages
z
Low R
z
DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
z
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
(TAB)
© 2003 IXYS All rights reserved
DS99002A(04/03)
IXFH 40N50Q
IXFT 40N50Q
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 20 V; ID = 0.5 • I
, pulse test 22 35 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 700 pF
VGS= 10 V, VDS = 0.5 • V
R
= 2.0 Ω (External), 56 ns
G
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
, ID = 0.5 • I
DSS
(TO-247) 0.25 K/W
min. typ. max.
4500 pF
180 pF
17 ns
D25
20 ns
14 ns
130 nC
D25
26 nC
58 nC
0.25 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 40 A
Repetitive; pulse width limited by T
JM
160 A
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
250 ns
I
= 25A, -di/dt = 100 A/µs, VR = 100 V 1.0 µC
F
10 A
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343