IXYS IXFT32N50, IXFH32N50, IXFT30N50, IXFH30N50 Datasheet
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr £ 250 ns
IXFH/IXFT 30N50
IXFH/IXFT 32N50
V
DSS
I
D25
R
DS(on)
500 V 30 A 0.16 W
500 V 32 A 0.15 W
Symbol Test Conditions Maximum Ratings
V
V
V
V
I
D25
I
DM
I
AR
E
E
dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ V
P
T
T
T
T
M
TJ= 25°C to 150°C 500 V
DSS
TJ= 25°C to 150°C; RGS = 1 MW 500 V
DGR
Continuous ±20 V
GS
Transient ±30 V
GSM
TC = 25°C 30N50 30 A
32N50 32 A
TC = 25°C 30N50 120 A
pulse width limited by T
TC = 25°C 30N50 30 A
JM
32N50 128 A
32N50 32 A
TC = 25°C 1.5 J
AS
ID = 25°C 45mJ
AR
, 5 V/ns
TJ £ 150°C, RG = 2 W
TC = 25°C 360 W
D
J
JM
stg
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
d
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
Weight 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXFH)
D (TAB)
TO-268 (D3) Case Style
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
(TAB)
Features
• International standard packages
• Low R
HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Diode
Applications
V
V
I
I
R
GSS
DSS
V
DSS
GS(th)VDS
DS(on)VGS
V
V
V
V
V
GS
DSS
GS(th)
GS
DS
GS
= 0 V, ID = 1 mA 500 V
temperature coefficient 0.102 %/K
= VGS, ID = 4 mA 2 4 V
temperature coefficient -0.206 %/K
= ±20 VDC, VDS = 0 ±100 nA
= 0.8 • V
= 0 V TJ = 125°C1mA
DSS
TJ = 25°C 200 mA
= 10 V, ID = 15A 32N50 0.15 W
30N50 0.16 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
97518H (6/99)
1 - 4
IXFH 30N50 IXFH 32N50
IXFT 30N50 IXFT 32N50
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 18 28 S
D25
5200 5700 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 640 7 50 pF
240 310 pF
35 45 ns
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
42 50 ns
RG = 2 W (External) 110 140 ns
26 35 ns
227 300 nC
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
29 40 nC
110 145 nC
0.35 K/W
(TO-247 Case Style) 0.25 K/W
Source-Drain Diode Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 30N50 30 A
Repetitive; 30N50 120 A
pulse width limited by T
JM
IF= IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I
S
-di/dt = 100 A/ms,
VR = 100 V
J
32N50 32 A
32N50 128 A
TJ = 25°C 250 ns
TJ = 125°C 400 ns
TJ = 25°C 0.85 mC
TJ = 25°C
8A
TO-247 AD (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
© 2000 IXYS All rights reserved
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
2.7 2.9 .106 .114
A
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Min. Recommended Footprint
2 - 4
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