IXYS IXFT30N40Q, IXFH30N40Q Datasheet
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dv/dt
g,
IXFH 30N40Q
IXFT 30N40Q
V
I
D25
R
DSS
DS(on)
= 400 V
=30A
= 0.16 W
trr £ 250 ns
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ V
P
D
T
J
T
JM
T
stg
T
L
M
d
TJ= 25°C to 150°C 400 V
TJ= 25°C to 150°C; RGS = 1 MW 400 V
Continuous ±20 V
Transient ±30 V
TC= 25°C30A
TC= 25°C, pulse width limited by T
JM
120 A
TC= 25°C30A
TC= 25°C 30mJ
1.5 mJ
, 5 V/ns
T
£ 150°C, RG = 2 W
J
DSS
TC= 25°C 30 0 W
-55 to +150 °C
150 °C
-55 to +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 250 mA 400 V
VDS= VGS, ID = 4 mA 2. 0 4. 0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C25mA
0.16 W
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low R
l
DS (on)
Rated for unclamped Inductive load
switching (UIS) rated
l
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
(TAB)
© 2000 IXYS All rights reserved
98754 (10/00)
IXFH 30N40Q
IXFT 30N40Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 540 pF
VGS= 10 V, VDS = 0.5 V
RG = 2.0 W (External), 51 ns
VGS= 10 V, VDS = 0.5 V
(TO-247) 0.25 K/W
, pulse test 18 25 S
D25
3300 pF
150 pF
25 n s
, ID = 0.5 I
DSS
D25
35 n s
12 n s
95 nC
, ID = 0.5 I
DSS
D25
22 nC
44 nC
0.42 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-247 AD (IXFH) Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 30 A
Repetitive; pulse width limited by T
JM
120 A
IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.1 250 ns
IF = IS, -di/dt = 100 A/ms, VR = 100 V mC
10 A
TO-268 Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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