IXYS IXFT28N50F, IXFH28N50F Datasheet
Advance Technical Information
HiPerRF
TM
IXFH 28N50F
IXFT 28N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
T
T
Continuous ±20 V
Transient ±30 V
T
T
T
T
T
T
T
1.6 mm (0.063 in.) from case for 10 s 300 °C
Mounting torque TO-247 1.13/10 Nm/lb.in.
V
V
V
VDS = V
V
VGS = 10 V, ID = 0.5 I
Note 1
rr
= 25°C to 150°C 500 V
J
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
= 25°C28A
C
= 25°C, pulse width limited by T
C
= 25°C28A
C
= 25°C35mJ
C
= 25°C 1.5 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
≤ 150°C, RG = 2 Ω
J
= 25°C 315 W
C
= 0 V, ID = 1mA 500 V
GS
= VGS, ID = 4mA 2.0 4.0 V
DS
= ±20 V, VDS = 0 ±100 nA
GS
DSS
= 0 V T
GS
Low Intrinsic R
g,
DSS
g
JM
112 A
10 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
TO-268 4 g
(T
= 25°C, unless otherwise specified)
D25
J
= 125°C 1.5 mA
J
min. typ. max.
190 mΩ
50 µA
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 250 ns
≤ ≤
rr
= 500V
= 28A
= 190m
ΩΩ
Ω
ΩΩ
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
l
Space savings
l
High power density
(TAB)
(TAB)
© 2002 IXYS All rights reserved
98883 (1/02)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXFH 28N50F
IXFT 28N50F
TO-247 AD Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
Note 1 12 18 S
D25
3000 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 500 pF
130 pF
15 ns
VGS = 10 V, VDS = 0.5 V
R
= 2.0 Ω (External) 41 ns
G
, ID = 0.5 I
DSS
D25
13 ns
8ns
95 nC
VGS = 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
20 nC
38 nC
(TO-247) 0.25 K/W
0.39 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 28 A
Repetitive; 112 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
J
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
2.87 3.12 .113 .123
b
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t
rr
IF = I
Q
RM
I
RM
,-di/dt = 100 A/µs, V
S
= 100 V
R
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Min Recommended Footprint
250 ns
1.0 µC
12 A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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