IXYS IXFT26N50Q, IXFT24N50Q, IXFH26N50Q, IXFH24N50Q Datasheet

HiPerFET

TM

V

DSS

I

D25

R

DS(on)

Power MOSFET s

IXFH/IXFT 24N50Q 500 V 24 A 0.23
IXFH/IXFT 26N50Q 500 V 26 A 0.20

Q-Class

t

N-Channel Enhancement Mode
Avalanche Rated, Low Q

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight TO-247 6 g

Symbol Test Conditions Characteristic Values

V

DSS

T

= 25°C to 150°C 500 V

J

T

= 25°C to 150°C; RGS = 1 MΩ 500 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C 24N50 24 A

C

T

= 25°C, Note 1 24N50 96 A

C

T

= 25°C 24N50 24 A

C

T

= 25°C 30 mJ

C

T

= 25°C 1.5 J

C

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

T

= 25°C 300 W

C

-55 ... +150 °C

150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 °C

Mounting torque 1.13/10 Nm/lb.in.

TO-268 4 g

VGS= 0 V, I

= 250 µA 500 V

D

High dv/dt

g,

26N50 26 A

26N50 104 A

26N50 26 A

, 5 V/ns

DSS

(T

= 25°C, unless otherwise specified)

J

min. typ. max.

≤ ≤

≤ 250 ns

≤ ≤

rr

TO-247 AD (IXFH)

TO-268 (D3) (IXFT) Case Style

G

S

G = Gate, D = Drain,
S = Source, TAB = Drain

Features

l

IXYS advanced low Qg process

l

International standard packages

l

Low R

l

DS (on)

Unclamped Inductive Switching (UIS)
rated

l

Fast switching

l

Molding epoxies meet UL 94 V-0
flammability classification

ΩΩ

Ω

ΩΩ
ΩΩ

Ω

ΩΩ

(TAB)

(TAB)

V

GS(th)

I

GSS

I

DSS

R

DS(on)

© 2001 IXYS All rights reserved

VDS= VGS, ID = 4 mA 2.5 4.5 V

V

= ±20 V

GS

VDS= V
VGS= 0 V T

DSS

VGS= 10 V, ID = 0.5 I

Note 2 26N50Q 0.20 Ω

, V

= 0 ±100 nA

DC

DS

T

= 25°C25µA

J

= 125°C1mA

J

D25

24N50Q 0.23 Ω

Advantages

l

Easy to mount

l

Space savings

l

High power density

98512G (5/01)

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

J

min. typ. max.

IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q

TO-247 AD Outline

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = 0.5 I

, Note 2 14 24 S

D25

3900 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 500 pF

130 pF

28 ns

VGS= 10 V, VDS = 0.5 V

R

= 2 Ω (External), 55 n s

G

, ID = 0.5 I

DSS

D25

30 ns

16 ns

95 nC

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

27 nC

40 nC

0.42 K/W

(TO-247) 0.25 K/W

Source-Drain Diode Characteristic Values

(T

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

VGS= 0 V 24N50Q 24 A

J

26N50Q 26 A

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

2.2 2.6 .059 .098

A

2

b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-268 Outline

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

I

SM

V

SD

t

rr

Q

RM

I

RM

Note 1. Pulse width limited by T

2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

Repetitive; Note1 24N50Q 96 A

IF = IS, VGS = 0 V, 1. 3 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IF = I

, -di/dt = 100 A/µs, VR = 100 V 0.85 µC

S

JM

Min Recommended Footprint

26N50Q 104 A

250 ns

8A

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

2.7 2.9 .106 .114

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

1.9 2.1 .75 .83

b

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632
E

13.3 13.6 .524 .535

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045

L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025