IXYS IXFH 16N80P, IXFT 16N80P, IXFV 16N80P, IXFV 16N80PS Service Manual
PolarHV
TM
Power MOSFET
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ = 25°C to 150°C 800 V
TJ = 25°C to 150°C; RGS = 1 MΩ 800 V
Continuous ±30 V
Transient ±40 V
TC = 25°C16A
TC = 25°C, pulse width limited by T
TC = 25°C8A
TC = 25°C30mJ
TC = 25°C 1.0 J
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
TJ ≤ 150°C, RG = 5 Ω
IXFV 16N80PS
JM
DSS
40 A
10 V/ns
V
DSS
I
D25
R
DS(on)
t
rr
TO-247 (IXFH)
G
D
S
TO-268 (IXFT)
G
PLUS220 (IXFV)
= 800 V
=16 A
≤≤
≤ 600 m
≤≤
≤≤
≤ 250 ns
≤≤
S
ΩΩ
Ω
ΩΩ
D (TAB)
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TC = 25°C 460 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Plastic body for 10 s 260 ° C
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Mounting force (PLUS220) 11..65/2.5..15 N/lb
TO-268 5.0 g
PLUS220 & PLUS220SMD 4.0 g
VGS= 0 V, ID = 250 μA 800 V
VDS= VGS, ID = 4 mA 3.0 5.0 V
VGS= ±30 V, VDS = 0 V ±100 nA
VDS= V
VGS= 0 V TJ = 125°C 250 μA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DSS
D25
25 μA
600 mΩ
G
D
S
PLUS220SMD (IXFV...S)
G
S
G = Gate D = Drain
S = Source TAB = Drain
Features
z
Fast Recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
International standard packages
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
D (TAB)
D (TAB)
© 2006 IXYS All rights reserved
DS99599E(07/06)
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCS
VDS= 20 V; ID = 0.5 I
, pulse test 9 16 S
D25
4600 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 330 pF
23 pF
27 ns
VGS= 10 V, VDS = V
DSS, ID
= 0.5 I
D25
32 ns
RG= 5 Ω (External) 75 ns
29 ns
71 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
21 nC
23 nC
0.27 °C/W
(TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
VGS = 0 V 16 A
Repetitive 48 A
IF = IS, VGS = 0 V, pulse test 1.5 V
IF = 25A, -di/dt = 100 A/μs 150 250 ns
VR = 100V; VGS = 0 V 7 A
0.7 μC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
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