IXYS IXFT15N100, IXFX15N100, IXFX14N100, IXFH14N100, IXFT14N100 Datasheet

1 - 4

© 2000 IXYS All rights reserved

Symbol Test Conditions Maximum Ratings

V

DSS

TJ= 25°C to 150°C 1000 V

V

DGR

TJ= 25°C to 150°C; RGS = 1 MW 1000 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

TC= 25°C 14N100 14 A

15N100 15 A

I

DM

TC= 25°C, pulse width limited by T

JM

14N100 56 A
15N100 60 A

I

AR

TC= 25°C 14N100 14 A

15N100 15 A

E

AR

TC= 25°C45mJ

dv/dt I

S

£ IDM, di/dt £ 100 A/ms, VDD £ V

DSS

, 5 V/ns

TJ£ 150°C, RG = 2 W

P

D

TC= 25°C 360 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

M

d

Mounting torque 1.13/10 Nm/lb.in.

Weight 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V

DSS

VGS= 0 V, ID = 1 mA 1000 V

V

GS(th)

VDS= VGS, ID = 4 mA 2.5 4.5 V

I

GSS

VGS= ±20 VDC, VDS = 0 ±100 nA

I

DSS

VDS= 0.8 • V

DSS

TJ =25°C 250 mA

VGS= 0 V TJ = 125°C1mA

R

DS(on)

VGS= 10 V, ID = 0.5 • I

D25

14N100 0.75 W
15N100 0.70 W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

N-Channel Enhancement Mode
High dv/dt, Low t

rr

, HDMOSTM Family

TO-247 AD
(IXFH)

Features

●

International standard packages

●

Low R

DS (on)

HDMOSTM process

●

Rugged polysilicon gate cell structure

●

Unclamped Inductive Switching (UIS)
rated

●

Low package inductance

- easy to drive and to protect

●

Fast intrinsic Rectifier

Applications

●

DC-DC converters

●

Battery chargers

●

Switched-mode and resonant-mode
power supplies

●

DC choppers

●

AC motor control

●

Temperature and lighting controls

Advantages

●

Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)

●

High power surface mountable package

●

High power density

V

DSS

I

D25

R

DS(on)

IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W
IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W

trr £ 200 ns

(TAB)

HiPerFET

TM

Power MOSFETs

97535B (1/99)

PLUS 247

TM

(IXFX)

G

D

Preliminary data sheet

TO-268 (D3)
(IXFT)

(TAB)

G

S

(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

© 2000 IXYS All rights reserved

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

1

2.7 2.9 .106 .114

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

2

1.9 2.1 .75 .83

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632
E

1

13.3 13.6 .524 .535

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

TO-268AA (D3 PAK)

PLUS247

TM

(IXFX) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A

1

2.29 2.54 .090 .100

A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190

Min. Recommended Footprint

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

VDS= 10 V; ID = 0.5 • I

D25

, pulse test 6 10 S

C

iss

4500 pF

C

oss

VGS= 0 V, VDS = 25 V, f = 1 MHz 430 pF

C

rss

150 pF

t

d(on)

27 ns

t

r

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = 0.5 • I

D25

30 ns

t

d(off)

RG = 2 W (External), 120 ns

t

f

30 ns

Q

g(on)

220 nC

Q

gs

VGS= 10 V, VDS = 0.5 • V

DSS

, ID = 0.5 • I

D25

30 nC

Q

gd

85 nC

R

thJC

0.35 K/W

R

thCK

0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

VGS= 0 V 14N100 14 A

15N100 15 A

I

SM

Repetitive; 14N100 56 A
pulse width limited by T

JM

15N100 60 A

V

SD

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

t

rr

TJ =25°C 200 ns
TJ = 125°C 350 ns

Q

RM

TJ =25°C1mC
TJ = 125°C2mC

I

RM

TJ =25°C10A
TJ = 125°C15A

IF = I

S

-di/dt = 100 A/ms,
VR = 100 V

(TO-247 Case Style)

IXFH14N100 IXFT14N100 IXFX15N100
IXFH15N100 IXFT15N100 IXFX14N100

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025