IXYS IXFH 140N10P, IXFT 140N10P Service Manual
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Advance Technical Information
PolarHVTM HiPerFET
IXFH 140N10P V
IXFT 140N10P I
Power MOSFET s
N-Channel Enhancement Mode
Fast Intrinsic Diode; Avalanche Rated
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6.0 g
TJ= 25°C to 175°C 100 V
TJ= 25°C to 175°C; RGS = 1 MΩ 100 V
TC= 25°C 140 A
External lead current limit 75 A
TC= 25°C, pulse width limited by T
JM
TC= 25°C60A
TC= 25°C80mJ
TC= 25°C 2.5 J
≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V
S
, 10 V/ns
DSS
TJ≤ 150°C, RG = 4 Ω
TC= 25°C 600 W
-55 ... +175 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
TO-268 5.0 g
R
±20 V
300 A
175 °C
DSS
D25
DS(on)
= 100 V
= 140 A
= 11 m
ΩΩ
Ω
ΩΩ
TO-247 (IXFT)
G
D
S
D (TAB)
TO-268 (IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
D (TAB)
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
V
I
I
DSS
GS(th)
GSS
DSS
VGS= 0 V, ID = 250 μA 100 V
VDS= VGS, ID = 4.0 mA 3.0 5.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
DSS
25 μA
VGS= 0 V TJ = 175°C 500 μA
R
DS(on)
VGS= 10 V, ID = 0.5 I
V
= 15 V, ID = 300 A 9 mΩ
GS
D25
11 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99213(02/04)
IXFH 140N10P
IXFT 140N10P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 45 65 S
D25
4700 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1850 pF
600 pF
35 ns
VGS = 10 V, VDS = 0.5 V
, ID = 60 A 50 ns
DSS
RG = 4 Ω (External) 85 ns
26 ns
155 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
33 nC
85 nC
0.25K/W
(TO-247) 0.21 K/W
Source-Drain Diode Characteristic Values
(T
Symbol Test Conditions Min. typ. Max.
I
S
I
SM
V
SD
VGS = 0 V 140 A
Repetitive 300 A
IF = IS, VGS = 0 V, 1.5 V
= 25°C, unless otherwise specified)
J
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
TO-247 AD Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
Dim. Millimeter Inches
3 - Source Tab - Drain
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
t
rr
IF = 25 A 120 ns
-di/dt = 100 A/μs
Q
RM
I
RM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
VR = 50 V 0.8 μC
6A
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