IXYS IXFT12N50F, IXFH12N50F Datasheet
Advanced Technical Information
HiPerRF
TM
IXFH 12N50F
IXFT 12N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic R
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-247 6 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MW 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C12A
TC= 25°C, pulse width limited by T
TC= 25°C12A
TC= 25°C20mJ
TC= 25°C 300 mJ
TJ£ 150°C, RG = 2 W
TC= 25°C 180 W
1.6 mm (0.063 in.) from case for 10 s 30 0 °C
Mounting torque TO-264 0.4/6 Nm/lb.in.
rr
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TO-264 4 g
DSS
g
JM
48 A
5 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
I
D25
R
DSS
DS(on)
= 500 V
= 12 A
= 0.4 W
trr £ 250 ns
TO-247 AD (IXFH)
TO-268 (IXFT) Case Style
G
S
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
l
RF capable MOSFETs
l
Double metal process for low gate
resistance
l
Low R
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
DS (on)
HDMOS
rated
l
Low package inductance
- easy to drive and to protect
l
Fast intrinsic rectifier
TM
process
(TAB)
(TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2000 IXYS All rights reserved
V
V
= 0 V, ID = 250uA 500 V
GS
= VGS, ID = 2.5 mA 3.0 5.0 V
DS
VGS = ±20 V, VDS = 0 ±100 nA
VDS = 0.8 • V
V
= 0 V TJ = 125°C 1 mA
GS
DSS
VGS = 10 V, ID = 0.5 • I
Note 1
D25
50 mA
0.4 W
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
l
DC choppers
l
13.5 MHz industrial applications
l
Pulse generation
l
Laser drivers
l
RF amplifiers
Advantages
l
Space savings
l
High power density
98737 (07/00)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
min. typ. max.
IXFH 12N50F
IXFT 12N50F
TO-247 AD Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
Note 1 6 1 0 S
D25
1870 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 290 pF
90 pF
11 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
14 ns
RG = 4.7 W (External), 28 ns
8ns
54 nC
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
18 nC
25 nC
(TO-247) 0.25 K/W
0.65 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 12 A
Repetitive; 48 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
t
rr
Q
RM
I
RM
IF = IS,-di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
Min Recommended Footprint
250 ns
0.8 mC
6.5 A
Dim . Millimeter Inches
Min. Max. Min. Max.
A 4. 9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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