IXYS IXFT13N100, IXFT12N100, IXFT10N100 Datasheet
1 - 4
© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Maximum Ratings
V
DSS
TJ= 25°C to 150°C 1000 V
V
DGR
TJ= 25°C to 150°C; RGS = 1 MW 1000 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
TC= 25°C 10N100 10 A
12N100 12 A
13N100 12.5 A
I
DM
TC= 25°C, pulse width limited by T
JM
10N100 40 A
12N100 48 A
13N100 50 A
I
AR
TC= 25°C 10N100 10 A
12N100 12 A
13N100 12.5 A
E
AR
TC= 25°C30mJ
dv/dt I
S
£ IDM, di/dt £ 100 A/ms, VDD £ V
DSS
, 5 V/ns
TJ £ 150°C, RG = 2 W
P
D
TC= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-268 = 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
VGS= 0 V, ID = 3 mA 1000 V
V
GS(th)
VDS= VGS, ID = 4 mA 2.0 4.5 V
I
GSS
VGS= ±20 VDC, VDS = 0 ±100 nA
I
DSS
VDS= 0.8 • V
DSS
TJ =25°C 250 mA
VGS= 0 V TJ = 125°C1mA
R
DS(on)
VGS= 10 V, ID = 0.5 • I
D25
10N100 1.20 W
12N100 1.05 W
13N100 0.90 W
Pulse test, t £ 300 ms, duty cycle d £ 2 %
G = Gate, TAB = Drain
S = Source,
Features
• International standard package
• Low R
DS (on)
HDMOSTM process
• Rugged polysilicon gate cell
structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Surface mountable, high power
package
• Space savings
• High power density
V
DSS
I
D25
R
DS(on)
IXFT 10 N100 1000 V 10 A 1.20 W
IXFT12 N100 1000 V 12 A 1.05 W
IXFT 13 N100 1000 V 12.5 A 0.90 W
trr £ 250 ns
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
98509A (4/99)
Preliminary data sheet
TO-268 Case Style
(TAB)
G
S
2 - 4
© 2000 IXYS All rights reserved
TO-268AA (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXFT 10N100 IXFT 12N100 IXFT 13N100
Min. Recommended Footprint
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
VDS= 10 V; ID = 0.5 • I
D25
, pulse test 6 10 S
C
iss
4000 pF
C
oss
VGS= 0 V, VDS = 25 V, f = 1 MHz 310 pF
C
rss
70 pF
t
d(on)
21 50 ns
t
r
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 • I
D25
33 50 ns
t
d(off)
RG = 2 W (External), 62 100 ns
t
f
32 50 ns
Q
g(on)
122 155 nC
Q
gs
VGS= 10 V, VDS = 0.5 • V
DSS
, ID = 0.5 • I
D25
30 45 nC
Q
gd
50 80 nC
R
thJC
0.42 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 10N100 10 A
12N100 12 A
13N100 12.5 A
I
SM
Repetitive; 10N100 40 A
pulse width limited by T
JM
12N100 48 A
13N100 50 A
V
SD
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
TJ =25°C 250 ns
TJ = 125°C 400 ns
Q
RM
TJ =25°C1mC
TJ = 125°C2mC
I
RM
TJ =25°C10A
TJ = 125°C15A
IF = I
S
-di/dt = 100 A/ms,
VR = 100 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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