IXYS IXFH, IXFT, IXFX14N100 IXFH Service Manual

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HiPerFET

TM

Power MOSFETs

IXFH/IXFT/IXFX14 N100 1000 V 14 A 0.75 W

V

IXFH/IXFT/IXFX15 N100 1000 V 15 A 0.70 W

N-Channel Enhancement Mode
High dv/dt, Low t

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

M

d

Weight 6 g

TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MW 1000 V

Continuous ±20 V
Transient ±30 V

TC= 25°C 14N100 14 A
TC= 25°C, pulse width limited by T
TC= 25°C 14N100 14 A

TC= 25°C45mJ

S

TJ£ 150°C, RG = 2 W
TC= 25°C 360 W

1.6 mm (0.062 in.) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.

, HDMOSTM Family

rr

£ IDM, di/dt £ 100 A/ms, VDD £ V

15N100 15 A
14N100 56 A

JM

15N100 60 A
15N100 15 A

, 5 V/ns

DSS

-55 ... +150 °C

-55 ... +150 °C

trr £ 200 ns

150 °C

DSS

I

D25

R

DS(on)

TO-247 AD
(IXFH)

PLUS 247

TM

(IXFX)

G

D

TO-268 (D3)
(IXFT)

G

S

Features

●

International standard packages

●

Low R

●

Rugged polysilicon gate cell structure

●

Unclamped Inductive Switching (UIS)

HDMOSTM process

DS (on)

rated

●

Low package inductance

- easy to drive and to protect

●

Fast intrinsic Rectifier

(TAB)

(TAB)

(TAB)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

V
V

I
I

R

GSS

DSS

DSS

GS(th)

DS(on)

VGS= 0 V, ID = 1 mA 1000 V
VDS= VGS, ID = 4 mA 2.5 4.5 V

VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= 0.8 • V

VGS= 0 V TJ = 125°C1mA

DSS

VGS= 10 V, ID = 0.5 • I

TJ =25°C 250 mA

D25

14N100 0.75 W
15N100 0.70 W

Pulse test, t £ 300 ms, duty cycle d £ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

Applications

●

DC-DC converters

●

Battery chargers

●

Switched-mode and resonant-mode
power supplies

●

DC choppers

●

AC motor control

●

Temperature and lighting controls

Advantages

●

Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
mounting clip or spring (PLUS 247TM)

●

High power surface mountable package

●

High power density

97535B (1/99)

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IXFH14N100 IXFT14N100 IXFX15N100
IXFH15N100 IXFT15N100 IXFX14N100

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g
C

C
C

t
t
t

t
Q

Q
Q

R
R

fs

iss
oss
rss

d(on)

r
d(off)

f

g(on)
gs
gd

thJC

thCK

J

VDS= 10 V; ID = 0.5 • I

, pulse test 6 10 S

D25

VGS= 0 V, VDS = 25 V, f = 1 MHz 430 pF

VGS= 10 V, VDS = 0.5 • V
RG = 2 W (External), 120 ns

VGS= 10 V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

, ID = 0.5 • I

DSS

(TO-247 Case Style)

min. typ. max.

4500 pF

150 pF

27 ns

D25

30 ns

30 ns

220 nC

D25

30 nC
85 nC

0.35 K/W

0.25 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

TO-247 AD (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

PLUS247

TM

(IXFX) Outline

I

S

I

SM

V

SD

t

rr

VGS= 0 V 14N100 14 A

Repetitive; 14N100 56 A
pulse width limited by T

IF = IS, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %

IF = I

Q

RM

-di/dt = 100 A/ms,
VR = 100 V

I

RM

TO-268AA (D3 PAK)

15N100 15 A

JM

S

15N100 60 A

TJ =25°C 200 ns
TJ = 125°C 350 ns
TJ =25°C1mC
TJ = 125°C2mC
TJ =25°C10A
TJ = 125°C15A

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

2.7 2.9 .106 .114

A

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632
E

13.3 13.6 .524 .535

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

Min. Recommended Footprint

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A

2.29 2.54 .090 .100

1

A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055

1.91 2.13 .075 .084

b

1

b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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