HiPerFET
ISOPLUS247
TM
Power MOSFETs
TM
(Electrically Isolated Back Surface)
IXFR 90N30 V
I
R
DSS
D25
DS(on)
= 300 V
= 75 A
= 33 mW
Single MOSFET Die
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ V
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGS = 1 MW 300 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 25°C, Note 1 36 0 A
TC= 25°C90A
TC= 25°C64mJ
TC= 25°C3J
5 V/ns
TJ£ 150°C, RG = 2 W
DSS
TC= 25°C 400 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in.) from case for 10 s 30 0 °C
50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
ISOPLUS 247
G = Gate D = Drain
S = Source
* Patent pending
Features
l
l
l
l
l
l
trr £ 250 ns
TM
E153432
Isolated backside*
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
HDMOSTM process
DS (on)
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
J
V
V
= 0 V, I
GS
= VGS, ID = 4mA 2.0 4.5 V
DS
= 250mA 30 0 V
D
VGS = ±20 V, VDS = 0 ±100 nA
VDS = V
V
DSS
= 0 V TJ = 125°C 2 mA
GS
VGS = 10 V, ID = I
T
TJ = 25°C 100 mA
min. typ. max.
33 mW
Notes 2, 3
© 2000 IXYS All rights reserved
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC & DC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
l
Low noise to ground
98764 (11/00)
IXFR 90N30
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 40 70 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 pF
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
RG = 2.0 W (External), Notes 2, 3 100 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
min. typ. max.
T
T
10000 pF
700 pF
42 ns
55 ns
40 ns
360 nC
60 nC
180 nC
0.30 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 90 A
Repetitive; Note 1 36 0 A
IF = IT, VGS = 0 V, Notes 2, 3 1.5 V
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
t
rr
Q
RM
I
RM
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse width limited by T
JM
250 ns
1.4 mC
10 A
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
= 45A
3. I
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025