IXYS IXFR80N20Q Datasheet
HiPerFET
TM
Power MOSFETs
IXFR 80N20Q V
ISOPLUS247TM, Q-Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
Preliminary data
= 200 V
= 71 A
= 28mW
I
D25
R
DSS
DS(on)
trr £ 200 ns
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
M
d
TJ= 25°C to 150°C 200 V
TJ= 25°C to 150°C; RGS = 1 MW 200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 71A
TC= 25°C, pulse width limited by T
JM
320 A
TC= 25°C 80A
TC= 25°C 45 mJ
1.5 J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
T
£ 150°C, RG = 2 W
J
, 5 V/ns
DSS
TC= 25°C 310 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque 1.13/10 Nm/lb.in.
Weight 5g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 250 uA 200 V
VDS= VGS, ID = 4 mA 2.0 4.0 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = I
Note 1
DSS
T
TJ = 25°C25mA
28 mW
ISOPLUS 247
TM
E153432
G
D
G = Gate D = Drain
S = Source TAB = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low R
• Rugged polysilicon gate cell structure
HDMOSTM process
DS (on)
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98617A (7/00)
1 - 2
IXFR 80N20Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = I
T
Note 1 35 45 S
4600 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1100 pF
500 pF
26 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
T
50 ns
RG = 2 W (External), 75 ns
20 ns
180 nC
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
T
39 nC
100 nC
0.15 K/W
0.40 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 80 A
Repetitive; 320 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
t
rr
Q
RM
I
RM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %; IT = 80A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
200 ns
1.2 mC
10 A
2 - 2
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