IXYS IXFR80N15Q Datasheet
Advanced Technical Information
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
IXFR 80N15Q
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,High dv/dt
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
TJ= 25°C to 150°C 150 V
TJ= 25°C to 150°C; RGS = 1 MW 150 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 25°C, Note 1 32 0 A
TC= 25°C80A
TC= 25°C45mJ
TC= 25°C 1.5 J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ£ 150°C, RG = 2 W
DSS
5 V/ns
V
DSS
I
D25
R
DS(on)
t
£ 200ns
rr
ISOPLUS 247
= 150 V
=75A
= 22.5 mW
TM
E153432
Isolated backside*
G = Gate D = Drain
S = Source
* Patent pending
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight 5 g
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TC= 25°C 310 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in.) from case for 10 s 30 0 °C
50/60 Hz, RMS t = 1 min 2500 V~
(T
= 25°C, unless otherwise specified)
V
V
J
= 0 V, I
GS
= VGS, ID = 4mA 2.0 4.0 V
DS
= 250mA 15 0 V
D
min. typ. max.
VGS = ±20 VDC, VDS = 0 ±100 nA
VDS = V
V
DSS
= 0 V TJ = 125°C1 mA
GS
VGS = 10 V, ID = I
T
TJ = 25°C 25 mA
22.5 mW
Notes 2, 3
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Easy assembly
Space savings
High power density
© 2000 IXYS All rights reserved
98750 (10/00)
IXFR 80N15Q
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 35 50 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 pF
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
RG = 2 W (External), Notes 2, 3 68 ns
VGS = 10 V, VDS = 0.5 • V
Notes 2, 3
DSS
, ID = I
min. typ. max.
4600 pF
T
T
680 pF
30 ns
55 ns
20 ns
180 nC
39 nC
85 nC
0.40 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISOPLUS 247TM Outline
Terminals: 1 - Gate
Dim. Millimeter Inches
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note: 1. Pulse width limited by T
VGS= 0 V 80 A
Repetitive; Note 1 32 0 A
IF = IS, VGS = 0 V, Notes 2, 3 1.5 V
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
= 40A
3. I
T
JM
200 ns
1.2 m C
10 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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