IXYS IXFR70N15 Datasheet
Advanced T echnical Information
HiPerFET
ISOPLUS247
TM
Power MOSFETs
TM
IXFR 70N15 V
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight 5 g
TJ= 25°C to 150°C 150 V
TJ= 25°C to 150°C; RGS = 1 MW 150 V
Continuous ±20 V
Transient ±30 V
TC= 25°C (MOSFET chip capability) 67 A
External lead (current limit) 280 A
TC= 25°C, Note 1 70 A
TC= 25°C70A
TC= 25°C30mJ
TC= 25°C 1.0 J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
£ 150°C, RG = 2 W
T
J
TC= 25°C 250 W
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
DSS
rr
ISOPLUS 247
G = Gate D = Drain S = Source
* Patent pending
5 V/ns
Features
-55 ... +150 °C
• Silicon chip on Direct-Copper-Bond
150 °C
-55 ... +150 °C
• Low drain to tab capacitance(<30pF)
• Low R
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
• Fast intrinsic Rectifier
=150 V
DSS
I
D25
R
=67 A
=28mW
DS(on)
trr£ 250ns
TM
E153432
Isolated backside*
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
HDMOSTM process
DS (on)
Switching (UIS)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
J
V
V
= 0 V, ID = 250mA 150 V
GS
= VGS, ID = 4mA 2.0 4.0 V
DS
VGS = ±20 V, VDS = 0 ±100 nA
VDS = V
V
DSS
= 0 V TJ = 125°C 750 mA
GS
VGS = 10 V, ID = I
Notes 2, 3
T
TJ = 25°C 25 mA
min. typ. max.
28 mW
© 2000 IXYS All rights reserved
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
98714 (03/27/00)IXYS reserves the right to change limits, test conditions, and dimensions.
1 - 2
IXFR 70N15
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = I
T
Notes 2, 3 30 45 S
3600 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 1080 pF
360 pF
35 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
T
52 ns
RG = 1 W (External), Notes 2, 3 70 ns
23 ns
180 nC
VGS = 10 V, VDS = 0.5 • V
Notes 2, 3
DSS
, ID = I
T
28 nC
92 nC
0.15 K/W
0.5 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 70 A
Repetitive; Note 1 280 A
IF = IT, VGS = 0 V, Notes 2, 3 1.5 V
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
t
rr
Q
RM
I
RM
Note: 1. Pulse width limited by T
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. I
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
JM
= 35A
T
© 2000 IXYS All rights reserved
250 ns
0.85 mC
8A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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