IXYS IXFR55N50F Datasheet
Advance Technical Information
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic R
High dV/dt, Low t
TM
IXFR 55N50F V
I
R
trr
g
rr
ISOPLUS 247
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MΩ 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C47A
TC= 25°C, pulse width limited by T
TC= 25°C55A
JM
220 A
G = Gate D = Drain
S = Source TAB = Electrically Isolated
Features
z
TC= 25°C60mJ
TC= 25°C 3.0 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
TJ≤ 150°C, RG = 2 Ω
DSS
TC= 25°C 400 W
10 V/ns
z
z
-40 ... +150 ° C
150 °C
-40 ... +150 ° C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
z
z
z
z
Weight 5 g
z
DSS
D25
DS(on)
= 500 V
= 47 A
= 85 m
≤ ≤
≤ 250 ns
≤ ≤
TM
ΩΩ
Ω
ΩΩ
E153432
Isolated backside*
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
RF capable Mosfets
Low gate charge and capacitances
- easier to drive
-faster switching
Low drain to tab capacitance(<30pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2002 IXYS All rights reserved
V
V
= 0 V, ID = 1mA 500 V
GS
= VGS, ID = 8mA 3.0 5.5 V
DS
VGS = ±20 V, VDS = 0 ±200 nA
VDS = V
V
DSS
= 0 V TJ = 125°C3 mA
GS
VGS = 10 V, ID = I
Notes 2, 3
J
TJ = 25°C 100 µA
T
min. typ. max.
85 mΩ
Applications
z
DC-DC converters
z
Battery chargers
z
Switched-mode and resonant-mode
power supplies
z
DC choppers
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
98814 (4/02)
IXFR 55N50F
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 22 33 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1250 pF
VGS = 10 V, VDS = 0.5 • V
DSS
, ID =I
RG = 1 Ω (External) 45 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
min. typ. max.
T
T
6700 pF
330 pF
24 ns
20 ns
9.6 ns
195 nC
50 nC
95 nC
0.30 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 55 A
Repetitive; 220 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, Note 1 1.5 V
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
t
rr
Q
RM
I
RM
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
Note: 1. Pulse width limited by T
JM
250 ns
1.0 µ C
10 A
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. I
= 10.5A
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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