IXYS IXFR55N50 Datasheet
HiPerFET
ISOPLUS247
TM
Power MOSFETs
TM
(Electrically Isolated Back Surface)
Single Die MOSFET
V
DSS
I
D25
R
DS(on)
IXFR 50N50 500 V 43 A 100 m
IXFR 55N50 500 V 48 A 90 m
t
≤ ≤
≤ 250 ns
≤ ≤
rr
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C 50N50 43 A
C
T
= 25°C, Pulse width limited by T
C
T
= 25°C 50N50 50 A
C
T
= 25°C60mJ
C
T
= 25°C3J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 400 W
C
DSS
55N50 48 A
50N50 200 A
JM
55N50 220 A
55N50 55 A
5 V/ns
-40 ... +150 °C
150 °C
-40 ... +150 °C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
ISOPLUS 247
G = Gate D = Drain
S = Source
* Patent pending
Features
l
l
l
l
l
l
Applications
TM
G
D
Isolated back surface*
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
V
V
V
VDS = V
V
= 0 V, ID = 1mA 500 V
GS
= VGS, ID = 8mA 2.5 4.5 V
DS
= ±20 V, VDS = 0 ±200 nA
GS
DSS
= 0 V T
GS
VGS = 10 V, ID = I
J
T
= 25°C 25 µA
J
= 125°C2 mA
J
T
50N50 100 mΩ
min. typ. max.
Note 1 55N50 90 mΩ
© 2002 IXYS All rights reserved
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
98588B (04/02)
IXFR 50N50
IXFR 55N50
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Note 1 45 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 pF
VGS = 10 V, VDS = 0.5 V
R
= 1 Ω (External), 120 ns
G
VGS = 10 V, VDS = 0.5 V
DSS
DSS
, ID = I
, ID = I
min. typ. max.
T
T
9400 pF
460 pF
45 ns
60 ns
45 ns
330 nC
55 nC
155 nC
0.30 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
ISOPLUS 247 OUTLINE
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 55N50 55 A
50N50 50 A
Repetitive; 55N50 220 A
pulse width limited by T
JM
50N50 200 A
IF = IS, VGS = 0 V 1. 5 V
I
= 25A,-di/dt = 100 A/µs, V
F
= 100 V
R
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. I
test current: 50N50 IT = 25A
T
55N50 I
= 27.5A
T
250 ns
1.0 µC
10 A
See IXFK55N50 data sheet for
characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Loading...