IXYS IXFR4N100Q Datasheet

Advance Technical Information
HiPerFET
TM
Power MOSFETs
ISOPLUS247
IXFR 4N100Q
TM
V I
D25
R
(Electrically Isolated Backside)
trr
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Symbol Test Conditions Maximum Ratings
V
DSS
V
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
T
= 25°C to 150°C 1000 V
J
T
= 25°C to 150°C; RGS = 1 M 1000 V
J
Continuous ±20 V Transient ±30 V
T
= 25°C 3.5 A
C
T
= 25°C, Note 1 16 A
C
T
= 25°C4A
C
T
= 25°C20mJ
C
T
= 25°C 700 mJ
C
IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
150°C, RG = 2
J
T
= 25°C80W
C
DSS
5 V/ns
-55 ... +150 °C 150 °C
-55 ... +150 °C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
ISOPLUS 247
G = Gate D = Drain S = Source
* Patent pending
Features
l
l
l
l
l
l
DSS
=1000 V = 3.5 A
DS(on)
200ns
= 3.0
TM
E153432
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation Low drain to tab capacitance(<30pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS)
Fast intrinsic Rectifier
Isolated backside*
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V V I I
R
DSS
GS(th)
GSS
DSS
DS(on)
V V
V
VDS = V V
= 0 V, ID = 1m A 1000 V
GS
= VGS, ID = 1.5 mA 3.0 5.0 V
DS
= ±20 V
GS
= 0 V T
GS
DSS
, V
DC
VGS = 10 V, ID = I
J
= 0 ±100 nA
DS
T
= 25°C 50 µA
J
= 125°C1 mA
J
T
min. typ. max.
3.0
Notes 2, 3
© 2001 IXYS All rights reserved
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
98860 (10/01)
IXFR 4N100Q
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g C
C C
t t t t
Q Q
Q R R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 1.5 2.5 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 120 pF
VGS = 10 V, VDS = 0.5 V
R
= 2 (External), Notes 2, 3 32 ns
G
VGS = 10 V, VDS = 0.5 V Notes 2, 3
DSS
DSS
, ID = I
, ID = I
min. typ. max.
1050 pF
T
T
30 pF
17 ns
15 ns
18 ns
39 nC
9nC
22 nC
1.57 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
J
ISOPLUS 247TM Outline
Terminals: 1 - Gate
Dim. Millimeter Inches
2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Min. Max. Min. Max.
A 4.83 5.21 .190 .205 A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055 b
1.91 2.13 .075 .084
1
b
2.92 3.12 .115 .123
2
C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note: 1. Pulse width limited by T
VGS= 0 V 80 A
Repetitive; Note 1 320 A
IF = IS, VGS = 0 V, Notes 2, 3 1.5 V
I
= 50A,-di/dt = 100 A/µs, V
F
2. Pulse test, t 300 µs, duty cycle d 2 %
= 2 A
3. I
T
JM
= 100 V
R
See IXFH4N100 data sheet for Characterisitic curves.
200 ns
1.2 µC
10 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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