IXYS IXFR44N50Q, IXFR48N50Q Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
TM
ISOPLUS247
(Electrically Isolated Backside)
, Q-Class
IXFR 44N50Q 500 V 34 A 120 m
IXFR 48N50Q 500 V 40 A 110 m
trr
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight 5 g
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C 44N50Q 34 A
C
T
= 25°C, Note 1 44N50Q 176 A
C
T
= 25°C 44N50Q 44 A
C
T
= 25°C60mJ
C
T
= 25°C 2.5 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 310 W
C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
High dv/dt
g,
DSS
48N50Q 40 A
48N50Q 192 A
48N50Q 48 A
5 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
ISOPLUS 247
G = Gate D = Drain
S = Source
* Patent pending
Features
l
l
l
l
l
l
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
≤ ≤
≤ 250 ns
≤ ≤
TM
E153432
Isolated backside*
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
IXYS advanced low Qg process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic diode
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2002 IXYS All rights reserved
V
V
V
VDS = V
V
= 0 V, ID = 250µA 500 V
GS
= VGS, ID = 4mA 2.0 4.0 V
DS
= ±20 V, VDS = 0 ±100 nA
GS
DSS
= 0 V T
GS
VGS = 10 V, ID = I
Notes 2, 3 48N50Q 110 mΩ
J
= 125°C 2 mA
J
T
44N50Q 120 mΩ
min. typ. max.
100 µA
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
98702B (6/02)
IXFR 44N50Q
IXFR 48N50Q
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 30 45 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 930 pF
VGS = 10 V, VDS = 0.5 V
R
= 1 Ω (External), Notes 2, 3 75 ns
G
VGS = 10 V, VDS = 0.5 V
Notes 2, 3
DSS
DSS
, ID = I
, ID = I
min. typ. max.
T
T
6400 pF
220 pF
33 ns
22 ns
10 ns
190 nC
40 nC
86 nC
0.40 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 48 A
Repetitive; Note 1 192 A
IF = IT, VGS = 0 V, Notes 2, 3 1.5 V
J
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
t
rr
Q
RM
I
RM
Note: 1. Pulse width limited by T
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IXFR44N50Q: I
IXFR48N50Q: I
I
= 25A,-di/dt = 100 A/µs, V
F
JM
= 22 A
T
= 24 A
T
= 100 V
R
250 ns
1.4 µC
10 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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