IXYS IXFR34N80 Datasheet
HiPerFET
ISOPLUS247
TM
Power MOSFETs
TM
(Electrically Isolated Backside)
Single MOSFET Die
Avalanche Rated
Preliminary Data Sheet
IXFR 34N80 V
I
R
t
DSS
D25
DS(on)
rr
= 800 V
= 28 A
= 0.24
≤ ≤
≤ 250 ns
≤ ≤
ΩΩ
Ω
ΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
T
= 25°C to 150°C 800 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 800 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C (MOSFET chip capability) 28 A
C
T
= 25°C, Note 1 600 A
C
T
= 25°C 150 A
C
T
= 25°C60mJ
C
T
= 25°C3J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 400 W
C
DSS
5 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
ISOPLUS 247
G = Gate D = Drain
S = Source
* Patent pending
Features
l
l
l
l
l
l
TM
E153432
G
D
Isolated backside*
S
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<25pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
V
I
I
R
DSS
GS(th)
GSS
DSS
DS(on)
V
V
V
VDS = V
V
= 0 V, ID = 3mA 150 V
GS
= VGS, ID = 8mA 2.0 4.0 V
DS
= ±20 V, VDS = 0 ±100 nA
GS
DSS
= 0 V T
GS
VGS = 10 V, ID = I
J
T
= 25°C 100 µA
J
= 125°C 2 mA
J
T
min. typ. max.
0.24 Ω
Notes 2, 3
© 2000 IXYS All rights reserved
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
98674A (02/00)
IXFR 34N80
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 20 35 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 920 pF
VGS = 10 V, VDS = 0.5 V
R
= 1 Ω (External), Notes 2, 3 100 ns
G
VGS = 10 V, VDS = 0.5 V
Notes 2, 3
DSS
DSS
, ID = I
, ID = I
min. typ. max.
T
T
7500 pF
220 pF
45 ns
45 ns
40 ns
270 nC
60 nC
140 nC
0.30 K/W
0.15 K/W
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 34 A
Repetitive; Note 1 136 A
IF = IT, VGS = 0 V, Notes 2, 3 1.5 V
J
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
t
rr
Q
RM
I
RM
IF = I
, -di/dt = 100 A/µs, V
T
Note: 1. Pulse width limited by T
= 100 V
R
JM
250 ns
1.4 µC
10 A
See IXFN 34N80 data sheet for
characteric curves.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
= 17A
3. I
T
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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