IXYS IXFR24N50, IXFR26N50 Datasheet
Advanced T echnical Information
HiPerFET
ISOPLUS247
TM
Power MOSFETs
TM
IXFR 26N50 500 V 24 A 0.20 W
IXFR 24N50 500 V 22 A 0.23 W
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGS = 1 MW 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 26N50 26 A
24N50 24 A
TC= 25°C, Pulse width limited by T
26N50 104 A
JM
24N50 96 A
TC= 25°C 26N50 26 A
24N50 24 A
t
V
DSS
£ 250 ns
rr
ISOPLUS 247
I
D25
TM
G
D
Isolated back surface*
G = Gate D = Drain
S = Source
* Patent pending
R
DS(on)
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
TC= 25°C30mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ£ 150°C, RG = 2 W
DSS
TC= 25°C 250 W
5 V/ns
Features
• Silicon chip on Direct-Copper-Bond
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.062 in.) from case for 10 s 300 °C
• Low drain to tab capacitance(<50pF)
• Low R
50/60 Hz, RMS t = 1 minute leads-to-tab 2500 V~
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
Weight 6 g
• Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
GSS
DSS
DSS
GS(th)
DS(on)
J
V
V
= 0 V, ID = 250uA 500 V
GS
= VGS, ID = 4mA 2 4 V
DS
VGS = ±20 VDC, VDS = 0 ±100 nA
VDS = 0.8 • V
V
= 0 V TJ = 125°C 1mA
GS
DSS
VGS = 10 V, ID = I
T
TJ = 25°C 200 mA
26N50 0.20 W
min. typ. max.
Notes 1 & 2 24N50 0.23 W
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
HDMOSTM process
DS (on)
rated
power supplies
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98526A (2/99)
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IXFR 24N50
IXFR 26N50
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
VDS= 15 V; ID = I
T
Note 1 11 21 S
4200 pF
VGS = 0 V, VDS = 25 V, f = 1 MHz 450 pF
135 pF
16 25 ns
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
T
33 45 ns
RG = 1 W (External), 65 80 ns
30 40 ns
135 160 nC
VGS = 10 V, VDS = 0.5 • V
DSS
, ID = I
T
28 40 nC
62 85 nC
0.15 K/W
0.50 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
VGS= 0 V 26 A
Repetitive; pulse width limited by T
JM
104 A
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
1.91 2.13 .075 .084
b
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
V
SD
t
rr
Q
RM
I
RM
IF = IS, VGS = 0 V, Note 1 1.5 V
TJ = 25°C 250 ns
TJ = 125°C 400 ns
IF = Is, -di/dt = 100 A/ms,
VR = 100 V
TJ = 25°C11.5 mC
TJ = 125°C2mC
TJ = 25°C10A
TJ = 125°C15A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
test current: IXFR26N50 IT = 13A
2. I
T
3.See IXFH26N50 data sheet for characteristic curves.
IXFR24N50 I
= 12A
T
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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