IXYS IXFR21N100Q Datasheet

HiPerFET
ISOPLUS247

TM

Power MOSFETs

TM

(Electrically Isolated Back Surface)

IXFR 21N100Q

V
I

D25

R

DSS

DS(on)

= 1000 V
= 19 A
= 0.50 W

N-Channel Enhancement Mode, Low Q

g,

High dv/dt, Low trr, HDMOSTM Family

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

D(RMS)

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MW 1000 V

Continuous ±20 V
Transient ±30 V

TC= 25°C (MOSFET chip capability) 19 A
External lead (current limit) 84 A
TC= 25°C, Note 1 21 A
TC= 25°C21A

TC= 25°C60mJ
TC= 25°C 2.3 J

£ IDM, di/dt £ 100 A/ms, VDD £ V

S

TJ£ 150°C, RG = 2 W

DSS

5 V/ns

TC= 25°C 400 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~

Weight 5 g

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

V
V
I
I

R

GSS

DSS

DSS

GS(th)

DS(on)

J

V
V

= 0 V, ID = 250mA 1000 V

GS

= VGS, ID = 8mA 2.5 4.5 V

DS

VGS = ±20 V, VDS = 0 ±100 nA
VDS = V

V
VGS = 10 V, ID = I

DSS

= 0 V TJ = 125°C2 mA

GS

T

min. typ. max.

100 mA

0.5 W

Notes 2, 3

ISOPLUS 247

G = Gate D = Drain
S = Source

* Patent pending

Features

• Silicon chip on Direct-Copper-Bond

• IXYS advanced low Qg process

• Low gate charge and capacitances

• Low drain to tab capacitance(<30pF)

• Low R

• Rugged polysilicon gate cell structure

• Rated for Unclamped Inductive Load

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

• DC choppers

• AC motor control

Advantages

• Easy assembly

• Space savings

• High power density

trr £ 250 ns

TM

E153432

Isolated backside*

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

- easier to drive

- faster switching
HDMOSTM process

DS (on)

Switching (UIS)

power supplies

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

98723 (05/24/00)

1 - 2

IXFR 21N100Q

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g
C

C
C

t
t
t
t

Q
Q

Q
R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

VDS= 10 V; ID = I

T

Notes 2, 3 16 22 S

5900 pF

VGS = 0 V, VDS = 25 V, f = 1 MHz 550 pF

90 pF
21 ns

VGS = 10 V, VDS = 0.5 • V

DSS

, ID = I

T

18 ns

RG = 1 W (External), Notes 2, 3 60 ns

12 ns

170 nC

VGS = 10 V, VDS = 0.5 • V
Notes 2, 3

DSS

, ID = I

T

38 nC
75 nC

0.15 K/W

0.30 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

I

SM

V

SD

VGS= 0 V 24 A
Repetitive; Note 1 96 A
IF = IT, VGS = 0 V, Notes 2, 3 1.5 V

ISOPLUS 247 (IXFR) OUTLINE

1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A

2.29 2.54 .090 .100

1

A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055

1.91 2.13 .075 .084

b

1

b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190

S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080

t

rr

Q

RM

I

RM

Note: 1. Pulse width limited by T

IF = 50A,-di/dt = 100 A/ms, VR = 100 V

JM

2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
= 10.5A

3. I

T

© 2000 IXYS All rights reserved

250 ns

1.0 mC
8A

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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