IXYS IXFR100N25 Datasheet
Advance Technical Information
HiPerFET
ISOPLUS247
TM
Power MOSFETs
TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight 5 g
T
= 25°C to 150°C 250 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 250 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C (MOSFET chip capability) 87 A
C
TC= External lead current limit 75 A
T
= 25°C, Note 1 400 A
C
T
= 25°C 100 A
C
T
= 25°C64mJ
C
T
= 25°C3J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 400 W
C
1.6 mm (0.063 in.) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
rr
DSS
IXFR 100N25
5 V/ns
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
I
R
trr
ISOPLUS 247
G = Gate D = Drain
S = Source
* Patent pending
Features
l
l
l
l
l
l
DSS
D25
DS(on)
≤ ≤
≤ 250 ns
≤ ≤
= 250 V
= 87 A
=27m
TM
ΩΩ
Ω
ΩΩ
E153432
Isolated backside*
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
V
V
V
VDS = V
V
= 0 V, ID = 3mA 250 V
GS
= VGS, ID = 8mA 2.0 4 V
DS
= ±20 V, VDS = 0 ±200 nA
GS
DSS
= 0 V T
GS
VGS = 10 V, ID = I
Notes 2, 3
J
T
= 25°C 100 µA
J
= 125°C2 mA
J
T
min. typ. max.
27 mΩ
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
98840 (5/01)
IXFR 100N25
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = I
T
Notes 2, 3 40 70 S
VGS = 0 V, VDS = 25 V, f = 1 MHz 1800 pF
VGS = 10 V, VDS = 0.5 V
R
= 1 Ω (External), Notes 2, 3 110 ns
G
VGS = 10 V, VDS = 0.5 V
Notes 2, 3
DSS
DSS
, ID = I
, ID = I
min. typ. max.
9100 pF
T
T
600 pF
42 ns
55 ns
40 ns
300 nC
57 nC
160 nC
0.3 K/W
0.15 K/W
ISOPLUS 247 OUTLINE
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Note: 1. Pulse width limited by T
VGS= 0 V 100 A
Repetitive; Note 1 400 A
IF = IT, VGS = 0 V, Notes 2, 3 1.5 V
I
= 50A,-di/dt = 100 A/µs, V
F
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
= 50
3. I
T
JM
J
= 100 V
R
250 ns
1.4 µC
10 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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