IXYS IXFP3N80, IXFA3N80 Datasheet
HiPerFET
TM
Power MOSFETs
IXFA 3N80
IXFP 3N80
V
I
R
D25
DSS
DS(on)
= 800 V
= 3.6 A
= 3.6 W
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ V
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight TO-220 4 g
TJ= 25°C to 150°C 800 V
TJ= 25°C to 150°C; RGS = 1 MW 800 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 3.6 A
TC= 25°C, pulse width limited by T
TC= 25°C 3.6 A
TC= 25°C 10mJ
T
£ 150°C, RG = 2 W
J
TC= 25°C 100 W
1.6 mm (0.063 in) from case for 10 s 300 °C
Mounting torque (TO-220) 1.13/10 Nm/lb.in.
TO-263 2 g
High dv/dt
g,
JM
14.4 A
400 mJ
, 5 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
t
£ 250 ns
rr
TO-220 (IXFP)
G
D
S
D (TAB)
TO-263 (IXFA)
G
S
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
l
International standard packages
l
Low R
l
DS (on)
Rated for unclamped Inductive load
Switching (UIS)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2000 IXYS All rights reserved
VGS= 0 V, ID = 1 mA 80 0 V
VDS= VGS, ID = 1 mA 2. 5 4. 5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C1mA
VGS= 10 V, ID = 0.5 I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
DSS
D25
TJ = 25°C50mA
3.6 W
Advantages
l
Easy to mount
l
Space savings
l
High power density
98746 (09/00)
IXFA 3N80
IXFP 3N80
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 73 pF
VGS= 10 V, VDS = 0.5 V
RG = 12 W (External), 25 ns
VGS= 10 V, VDS = 0.5 V
(TO-220) 0.25 K/W
, pulse test 2.5 3.4 S
D25
685 pF
16 pF
12 n s
, ID = 0.5 I
DSS
D25
11 n s
14 n s
24 nC
, ID = 0.5 I
DSS
D25
6nC
9nC
1.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
TO-220 (IXFP) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 3.6 A
Repetitive; pulse width limited by T
JM
14.4 A
IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
250 ns
IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.52 mC
1.8 A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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