IXYS IXFN80N50, IXFN75N50 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFETs
Single Die MOSFET
IXFN 80N50 500 V 80 A 50 m
IXFN 75N50 500 V 75 A 55
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C, Chip capability 75N50 75 A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C
C
T
= 25°C64mJ
C
T
= 25°C6J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 700 W
C
DSS
80N50 80 A
75N50 300 A
JM
80N50 320 A
, 5 V/ns
-55 ... +150 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
I
R
GSS
DSS
DSS
GH(th)
DS(on)
J
VGS= 0 V, ID = 3 mA 500 V
VDS= VGS, ID = 8 mA 2 4 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, 75N50 55 mΩ
DSS
, V
= 0 ±200 nA
DC
DS
T
= 25°C 100 µA
J
= 125°C2mA
J
80N50 50 mΩ
D25
min. typ. max.
duty cycle d ≤ 2 %
G
S
S
80 A
150 °C
-55 ... +150 °C
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
m
ΩΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate D = Drain
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
•International standard packages
•miniBLOC, with Aluminium nitride
isolation
•Low R
HDMOSTM process
DS (on)
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
98538C (02/02)
IXFN 75N50
IXFN 80N50
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS = 15 V; ID = 0.5 • I
, pulse test 50 70 S
D25
VGS = 0 V, VDS = 25 V , f = 1 MH z 1750 pF
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG = 1 Ω (External), 102 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
min. typ. max.
9890 pF
460 pF
61 ns
D25
70 ns
27 ns
380 nC
D25
80 nC
173 nC
0.18 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 75N50 75 A
80N50 80 A
Repetitive; 75N50 300 A
pulse width limited by TJM80N50 320 A
IF = IS, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
IF = 30A, -di/dt = 100 A/µs, VR = 100 V 250 ns
1.2 µC
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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