IXYS IXFN73N30, IXFK73N30 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFET s
IXFK 73 N 30 300 V 73 A 45 m
IXFN 73 N 30 300 V 73 A 45 m
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight 10 30 g
TJ= 25°C to 150°C 300 300 V
TJ= 25°C to 150°C; R
GS
Continuous ±20 ±20 V
Transient ± 3 0 ±3 0 V
TC= 25°C 73 73 A
TC= 25°C, pulse width limited by T
TC= 25°C 40 40 A
TC= 25°C 30 30 mJ
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, R
J
= 2 W
G
TC= 25°C 500 520 W
1.6 mm (0.063 in) from case for 10 s 300 - ° C
50/60 Hz, RMS t = 1 min - 2500 V~
I
≤ 1 mA t = 1 s - 3000 V~
ISOL
Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
rr
IXFK IXFN
= 1 MΩ 300 300 V
JM
DSS
292 292 A
, 5 5 V/ns
-55 ... +150 °C
150 ° C
-55 ... +150 °C
≤≤
t
≤ 200 ns
≤≤
rr
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)
TO-264 AA (IXFK)TO-264 AA (IXFK)
G
D
S
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
E153432 E153432
E153432
E153432 E153432
S
G
D
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l
International standard packages
l
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
l
miniBLOC with Aluminium nitride
isolation
l
Low R
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
l
Fast intrinsic Rectifier
HDMOSTM process
DS (on)
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
(TAB)
S
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VGS= 0 V, ID = 1 mA 300 V
VDS= VGS, ID = 8 mA 2 4 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= 0.8 V
VGS= 0 V TJ = 125°C 2 mA
DSS
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TJ = 25°C 400 uA
D25
45 mΩ
Applications
l
DC-DC converters
l
Synchronous rectification
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
Temperature and lighting controls
l
Low voltage relays
Advantages
l
Easy to mount
l
Space savings
l
High power density
92805J (11/01)
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
min. typ. max.
IXFK 73N30
IXFN 73N30
TO-264 AA Outline
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
thJC
thCK
VDS= 10 V; ID = 0.5 I
, pulse test 50 S
D25
9000 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 1500 pF
580 pF
30 ns
VGS= 10 V, VDS = 0.5 V
R
= 1 Ω (External), 100 ns
G
, ID = 0.5 I
DSS
D25
80 ns
50 ns
360 nC
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
D25
60 nC
180 nC
TO-264 AA 0.25 K/W
TO-264 AA 0.15 K/W
miniBLOC, SOT-227 B 0.24 K/W
miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
miniBLOC, SOT-227 B
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 V 73 A
Repetitive; pulse width limited by T
JM
292 A
IF = 100 A, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
200 ns
IF = I
, -di/dt = 100 A/µs, VR = 100 V 2 µC
S
40 A
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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