IXYS IXFN55N50F Datasheet
Advance Technical Information
HiPerRF
TM
IXFN 55N50F V
Power MOSFETs
F-Class: MegaHertz Switching
D
N-Channel Enhancement Mode
Avalanche Rated, Low Q
High dV/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
J
V
ISOL
M
d
Weight 30g
Symbol Test Conditions Characteristic Values
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
rr
T
= 25°C to 150°C 500 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 500 V
J
Continuous ±20 V
Transient ±30V
T
= 25°C55A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C55A
C
T
= 25°C60mJ
C
T
= 25°C3.0J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 600 W
C
1.6 mm (0.63 in) from case for 10 s - °C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
VGS= 0 V, ID = 1 mA 500 V
VDS= VGS, ID = 8 mA 3.0 5.5 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
DSS
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 85 mΩ
Low Intrinsic R
g,
g
JM
, 5 V/ns
DSS
-55 ... +150 °C
-55 ... +150 °C
(T
= 25°C, unless otherwise specified)
J
, V
= 0 ±200 nA
DC
DS
T
= 25°C 100 µA
J
= 125°C3mA
J
D25
min. typ. max.
G
S
S
220 A
150 °C
miniBLOC, SOT-227 B
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
= 500 V
= 55 A
= 85 m
≤ ≤
≤ 250 ns
≤ ≤
S
G
D
ΩΩ
Ω
ΩΩ
S
I
D25
R
trr
DSS
DS(on)
RF capable Mosfets
Rugged polysilicon gate cell structure
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Easy to mount
Space savings
High power density
© 2001 IXYS All rights reserved
98854 (8/01)
IXFN 55N50F
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS = 10 V; ID = 0.5 • I
, pulse test 22 33 S
D25
VGS = 0 V, VDS = 25 V , f = 1 MH z 1250 pF
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
RG = 1 Ω (External), 45 ns
VGS = 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
min. typ. max.
6700 pF
330 pF
24 ns
D25
20 ns
9.6 ns
195 nC
D25
50 nC
95 nC
0.21 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 55 A
Repetitive; 220 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
IF = 50A, -di/dt = 100 A/µs, VR = 100 V 250 ns
1.6 µC
13 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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