IXYS IXFN 55N50, IXFN 50N50 Service Manual

HiPerFET

TM

V

DSS

I

D25

R

DS(on)

t

rr

Power MOSFET

IXFN 55N50 500V 55A 80mΩ 250ns
IXFN 50N50 500V 50A 100mΩ 250ns

Single Die MOSFET

IXFK 55N50 500V 55A 80mΩ 250ns
IXFK 50N50 500V 50A 100mΩ 250ns

Preliminary data sheet

Symbol Test Conditions Maximum Ratings

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

M

TJ= 25°C to 150°C 500 500 V
TJ= 25°C to 150°C 500 500 V

Continuous ±20 ±20 V
Transient ±30 ±30 V

T

= 25°C 55 50 55 50 A

C

T

=25°C,

C

T

C

T

C

S

T

J

T

C

= 25°C 55 50 55 50 A
= 25°C60 60mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
≤ 150°C, RG = 2 Ω

= 25°C 560 600 W

1.6 mm (0.063 in) from case for 10 s 300 N/A °C

50/60 Hz, RMS t = 1 min N/A 2500 V~

≤ 1 mA t = 1 s N/A 3000 V~

I

ISOL

Mounting torque 0.9/6 1.5/13 Nm/lb.in.

d

Terminal connection torque N/A 1.5/13 Nm/lb.in.

Weight 10 30 g

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified) Min. Typ. Max.

J

V

V

I

I

R

DSS

GS(th)

GSS

DSS

DS(on)

V

= 0 V, ID = 1mA 500 V

GS

V

= VGS, ID = 8mA 2.5 4.5 V

DS

V

= ±20V; VDS = 0V ±200 nA

GS

V

= V

DS

DSS

V

= 0 V T

GS

VGS= 10 V, ID = 0.5 • I

D25

Note 1 50N50 100 mΩ

IXFK IXFK IXFN IXFN

55N50 50N50 55N50 50N50

220 200 220 200 A

5 5 V/ns

DSS

-55 ... +150 °C

150 °C

-55 ... +150 °C

T

= 25°C25µA

J

= 125°C2mA

J

55N50 80 mΩ

TO-264 AA (IXFK)

G

D

S

D (TAB)

miniBLOC, SOT-227 B (IXFN)
E153432

S

G

S

D

G = Gate D = Drain
S = Source TAB = Drain

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

• International standard packages

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

HDMOSTM process

DS (on)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

Advantages

• Easy to mount

• Space savings

• High power density

© 2002 IXYS All rights reserved

97502F (04/02)

IXFK50N50 IXFK55N50
IXFN50N50 IXFN55N50

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified) Min. Typ. Max.

J

g

C

C

C

t

t

t

t

Q

Q

Q

R

R

R

R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

thJC

thCK

VDS= 10 V; ID = 0.5 • I

Note 1 4 5 S

D25

9400 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 1280 pF

460 pF

45 ns

VGS= 10 V, VDS = 0.5 • V

R

= 1 Ω (External), 120 ns

G

, ID = 0.5 • I

DSS

D25

60 ns

45 ns

330 nC

VGS= 10 V, VDS = 0.5 • V

, ID = 0.5 • I

DSS

D25

55 nC

155 nC

TO-264 AA 0.22 K/W

TO-264 AA 0.15 K/W

miniBLOC, SOT-227 B 0.21 K/W

miniBLOC, SOT-227 B 0.05 K/W

Source-Drain Diode

(T

= 25°C, unless otherwise specified) Characteristic Values

J

Symbol Test Conditions Min. Typ. Max.

TO-264 AA Outline

Dim.

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

miniBLOC, SOT-227 B

V

I

S

= 0 55N50 55 A

GS

50N50 50 A

I

SM

V

SD

t

rr

Q

RM

I

RM

Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

Repetitive; 55N50 220 A

pulse width limited by T

50N50 200 A

JM

IF = 100 A, VGS = 0 V Note 1 1.5 V

250 ns

I

= 25 A, -di/dt = 100 A/µs, VR = 100 V 1.0 µC

F

10 A

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004