IXYS IXFN34N100 Datasheet
HiPerFET
TM
IXFN 34N100 V
DSS
= 1000V
Power MOSFETs
Single Die MOSFET
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MW 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C, Chip capability 34 A
TC= 25°C, pulse width limited by T
JM
TC= 25°C34A
TC= 25°C64mJ
TC= 25°C4J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ£ 150°C, RG = 2 W
, 5 V/ns
DSS
TC= 25°C 700 W
-55 ... +150 °C
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 30 g
G
S
S
136 A
150 °C
-55 ... +150 °C
I
D25
R
DS(on)
= 34A
= 0.28W
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
HDMOSTM process
DS (on)
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GH(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 3 m A 1000 V
VDS= VGS, ID = 8 mA 2.5 5.0 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125°C2mA
DSS
VGS= 10 V, ID = 0.5 • I
Pulse test, t £ 300 ms,
TJ = 25°C 100 mA
D25
0.28 W
duty cycle d £ 2 %
© 2001 IXYS All rights reserved
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
98763A (02/01)
IXFN 34N100
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 15 V; ID = 0.5 I
VGS= 0 V, VDS = 25 V, f = 1 MHz 1200 pF
VGS= 10 V, VDS = 0.5 V
RG = 1 W (External), 110 n s
VGS= 10 V, VDS = 0.5 V
, pulse test 18 40 S
D25
9200 pF
300 pF
41 ns
, ID = 0.5 I
DSS
D25
65 ns
30 ns
380 nC
, ID = 0.5 I
DSS
D25
65 nC
185 nC
0.18 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 34 A
Repetitive; 136 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1. 3 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
Q
RM
I
RM
IF = IS, -di/dt = 100 A/ms, VR = 100 VTJ = 25°C180 ns
TJ =125°C 330 ns
TJ = 25°C2 mC
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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