IXYS IXFN340N07 Datasheet
HiPerFET
TM
IXFN 340N07 V
Power MOSFETs
Single Die MOSFET
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight 30 g
TJ= 25°C to 150°C70V
TJ= 25°C to 150°C; RGS = 1 MW 70 V
Continuous ±20 V
Transient ±30 V
TC = 25°C, Chip capability 34 0 A
Terminal current limit 100 A
TC = 25°C, pulse width limited by T
TC = 25°C 200 A
TC = 25°C64mJ
TC = 25°C4J
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
TJ £ 150°C, RG = 2 W
TC= 25°C 700 W
50/60 Hz, RMS t = 1 min 2500 V~
I
£ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
rr
JM
, 5 V/ns
DSS
-55 ... +150 °C
G
S
S
1360 A
150 °C
-55 ... +150 °C
DSS
I
D25
R
DS(on)
= 70 V
= 340 A
= 4 mW
trr £ 250ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
International standard packages
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
HDMOSTM process
DS (on)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V
I
I
R
DSS
GH(th)
GSS
DSS
DS(on)
VGS= 0 V, ID = 3 mA 70 V
VDS= VGS, ID = 8 mA 2.0 4.0 V
VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= V
VGS= 0 V TJ = 125°C2mA
DSS
TJ = 25°C 100 mA
VGS= 10 V, ID = 100A 4 mW
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
© 2000 IXYS All rights reserved
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
98547B (10/00)
IXFN 340N07
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 15 V; ID = 60A, pulse test 80 105 S
VGS= 0 V, VDS = 25 V, f = 1 MHz 8000 pF
VGS= 10 V, V
= 0.5 V
DS
, ID = 100A 95 ns
DSS
RG= 1 W (External) 200 n s
VGS= 10 V, V
= 50 V, ID = 100A 110 nC
DS
min. typ. max.
16800 pF
4800 pF
140 ns
33 ns
600 nC
300 nC
0.18 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 340 A
Repetitive; 1360 A
pulse width limited by T
JM
IF = 100A, VGS = 0 V, 1. 2 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
Q
RM
I
RM
IF = 50A, -di/dt = 100 A/ms, VR = 50V TJ = 25°C 250 ns
1.4 mC
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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