IXYS IXFN32N60, IXFN36N60, IXFK36N60, IXFK32N60 Datasheet

IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60

Preliminary Data

HiPerFET

TM

Power MOSFET

N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t

Symbol Test Conditions Maximum Ratings

rr

IXFK IXFN

IXFK/FN 36N60 600V 36A 0.18Ω 250ns
IXFK/FN 32N60 600V 32A 0.25Ω 250ns

V

DSSID25

TO-264 AA (IXFK)

R

DS(on)

t

rr

V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

DM

I

AR

E

AR

dv/dt I

P

D

T

J

T

JM

T

stg

T

L

V

ISOL

M

d

TJ= 25°C to 150°C 600 600 V
TJ= 25°C to 150°C; RGS = 1 MΩ 600 600 V

Continuous ±20 ±20 V
Transient ±30 ±30 V

TC= 25°C, Chip capability 32N60 32 32 A

36N60 36 36 A

TC= 25°C, pulse width limited by TJM32N60 128 128 A

36N60 144 144 A

TC= 25°C2020A
TC= 25°C3030mJ

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

T

≤ 150°C, RG = 2 Ω

J

DSS

5 5 V/ns

TC= 25°C 500 520 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

1.6 mm (0.063 in) from case for 10 s 300 - °C
50/60 Hz, RMSt = 1 min - 2500 V~

≤ 1 mAt = 1 s - 3000 V~

I

ISOL

Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.

Weight 10 30 g

G

D

S

D (TAB)

miniBLOC, SOT-227 B (IXFN)

E153432

S

G

S

D

G = Gate D = Drain
S = Source TAB = Drain

Either Source terminal at miniBLOC

can be used as Main or Kelvin Source

Features

• International standard packages

• JEDEC TO-264 AA, epoxy meet

UL

94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

HDMOSTM process

DS (on)

rated

• Low package inductance

• Fast intrinsic Rectifier

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

J

V

DSS

V

GH(th)

I

GSS

I

DSS

R

DS(on)

IXYS reserves the right to change limits, test conditions, and dimensions.

©1996 IXYS Corporation. All rights reserved.
IXYS Corporation

3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]

VGS= 0 V, ID = 1 mA 600 V
VDS= VGS, ID = 8 mA 2 4 .5 V

VGS= ±20 VDC, VDS = 0 ±200 nA
VDS= 0.8 V

V

GS

DSS

= 0 V TJ = 125°C2mA

VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µ s, duty cycle ≤ 2 % 32N60 0.25 Ω

TJ = 25°C 400 µA

D25

Min. Typ. Max.

36N60 0.18 Ω

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

92807G (01/96)

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: [phone] Fax: [phone]

IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

J

min. typ. max.

TO-264 AA Outline

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

thJC

thCK

VDS= 10 V; ID = 0.5 I

, pulse test 36 S

D25

9000 pF

VGS= 0 V, VDS = 25 V, f = 1 MHz 840 pF

280 pF

30 ns

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

45 ns

RG = 1 Ω (External), 100 ns

60 ns

325 nC

VGS= 10 V, VDS = 0.5 V

, ID = 0.5 I

DSS

D25

60 nC

120 nC

TO-264 AA 0.25 K/W
TO-264 AA 0.15 K/W

miniBLOC, SOT-227 B 0.24 K/W
miniBLOC, SOT-227 B 0.05 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

Millimeter Inches

Dim.

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 1 9. 96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

miniBLOC, SOT-227 B

I

S

I

S

I

SM

V

SD

t

rr

I

RM

VGS= 0 36N60 36 A
VGS= 0 32N60 32 A

Repetitive; pulse width limited by T

36N60 144 A

JM

32N60 128 A

IF = IS A, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IF = IS, -di/dt = 100 A/µs, VR = 100 V

20 A

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

250 ns

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004