IXYS IXFN280N07 Datasheet

HiPerFET

TM

IXFN 280N07 V

DSS

= 70 V

Power MOSFETs
Single Die MOSFET

N-Channel Enhancement Mode t

Avalanche Rated, High dv/dt, Low t

rr

Preliminary data sheet

Symbol Test Conditions Maximum Ratings
V

DSS

V

DGR

V

GS

V

GSM

I

D25

I

L(RMS)

I

DM

I

AR

E

AR

E

AS

dv/dt I

P

D

T

J

T

JM

T

stg

V

ISOL

M

d

Weight 30 g

Symbol Test Conditions Characteristic Values

V

DSS

V

GH(th)

I

GSS

I

DSS

R

DS(on)

T

= 25°C to 150°C70V

J

T

= 25°C to 150°C; RGS = 1 MΩ 70 V

J

Continuous ±20 V
Transient ±30 V

T

= 25°C, Chip capability 280 A

C

Terminal current limit 100 A

T

= 25°C, pulse width limited by T

C

T

= 25°C 180 A

C

T

= 25°C60mJ

C

T

= 25°C3J

C

≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V

S

≤ 150°C, RG = 2 Ω

T

J

T

= 25°C 600 W

C

JM

, 5 V/ns

DSS

-55 ... +150 °C

50/60 Hz, RMS t = 1 min 2500 V~
I

≤ 1 mA t = 1 s 3000 V~

ISOL

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.

(T

= 25°C, unless otherwise specified)

J

min. typ. max.

VGS= 0 V, ID = 3 mA 70 V

VDS= VGS, ID = 8 mA 2.0 4.0 V

V

= ±20 V

GS

VDS= V
VGS= 0 V T

VGS= 10 V, I

Pulse test, t ≤ 300 µs,

, V

= 0 ±200 nA

DC

DS

T

DSS

= 120A 5 mΩ

D

= 25°C 100 µA

J

= 125°C2mA

J

duty cycle d ≤ 2 %

G

S

1120 A

150 °C

-55 ... +150 °C

D

S

I

R

D25

rr

DS(on)

= 280 A
= 5 m

ΩΩ

Ω

ΩΩ

< 250 ns

miniBLOC, SOT-227 B (IXFN)
E153432

S

G

S

D

G = Gate D = Drain
S = Source

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

Features

•International standard packages

•miniBLOC, with Aluminium nitride

isolation

•Low R

HDMOSTM process

DS (on)

•Rugged polysilicon gate cell structure

•Unclamped Inductive Switching (UIS)

rated

•Low package inductance

•Fast intrinsic Rectifier

Applications

•DC-DC converters

•Synchronous rectification

•Battery chargers

•Switched-mode and resonant-mode

power supplies

•DC choppers

•Temperature and lighting controls

•Low voltage relays

Advantages

•Easy to mount

•Space savings

•High power density

© 2002 IXYS All rights reserved

98555B (1/02)

IXFN 280N07

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

g
C

C
C

t
t
t
t

Q
Q
Q

R
R

fs

iss

oss

rss

d(on)

r

d(off)

f

g(on)

gs

gd

thJC

thCK

J

VDS= 15 V; 60A, pulse test 60 90 S

VGS= 0 V, VDS = 25 V , f = 1 M Hz 4600 pF

VGS= 10 V, VDS = 0.5 • V

, ID = 90A 90 ns

DSS

RG= 1 Ω (External), 140 ns

VGS= 10 V, VDS, ID = 100A 65 nC

min. typ. max.

9400 pF

2550 pF

65 ns

55 ns

420 nC

220 nC

0.22 K/W

0.05 K/W

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
I

S

I

SM

V

SD

VGS= 0 V 280 A

Repetitive; 1120 A
pulse width limited by T

JM

IF = 100A, VGS = 0 V, 1.3 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

Q

RM

I

RM

IF = 50A, -di/dt = 100 A/µsT
VR = 50V 1.2 µC

=25°C 200 ns

J

10 A

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025