IXYS IXFN27N80Q Datasheet
HiPerFET
TM
Power MOSFETs
Q-Class
IXFN 27N80Q
V
I
R
D25
DSS
DS(on)
= 800 V
= 27 A
= 320 m
ΩΩ
Ω
ΩΩ
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight 30 g
T
= 25°C to 150°C 800 V
J
T
= 25°C to 150°C; RGS = 1 MΩ 800 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C27A
C
T
= 25°C, pulse width limited by T
C
T
= 25°C60mJ
C
T
= 25°C 2.5 J
C
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
T
= 25°C 520 W
C
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
rr
JM
, 5 V/ns
DSS
G
S
-55 ... +150 °C
-55 ... +150 °C
D
S
108 A
27 A
150 °C
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
D
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• Epoxy meet
UL
94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• IXYS advanced low Q
process
g
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
S
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VGS = 0 V, I
= 250 µA 800 V
D
VDS = VGS, ID = 4 mA 2.5 4.5 V
V
= ±20 V
GS
VDS= V
VGS= 0 V T
DSS
, V
DC
VGS= 10 V, ID = 0.5 I
Note 1
J
= 0 ±100 nA
DS
T
= 25°C 100 µA
J
= 125°C2mA
J
D25
min. typ. max.
0.32 Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
98813 (04/01)
IXFN 27N80Q
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
, pulse test 20 27 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 750 pF
VGS= 10 V, VDS = 0.5 V
R
= 1 Ω (External), 50 ns
G
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
, ID = 0.5 I
DSS
min. typ. max.
7600 pF
120 pF
20 ns
D25
28 ns
13 ns
170 nC
D25
47nC
65 nC
0.24 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Source-Drain Diode Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
VGS= 0 V 27 A
Repetitive; 108 A
pulse width limited by T
IF = IS, VGS = 0 V, 1.5 V
J
JM
Note 1
IF = I
t
rr
Q
RM
I
RM
, -di/dt = 100 A/µs, V
S
= 100 V 250 ns
R
1.3 µC
8A
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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