IXYS IXFN24N100, IXFN23N100 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
Power MOSFET
IXFN 24N100 1000 V 24 A 0.39
IXFN 23N100 1000 V 23 A 0.43
t
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
Weight 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C, RGS = 1MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC = 25°C 24N100 24 A
23N100 23 A
TC = 25°C; Note 1 24N100 96 A
23N100 92 A
TC = 25°C 24 A
TC= 25°C 60 mJ
TC= 25°C 3 J
≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
S
T
≤ 150°C, RG = 2 Ω
J
TC = 25°C 600 W
1.6 mm (0.063 in) from case for 10 s 30 0 °C
50/60 Hz, RMS t = 1 min 2500 V~
≤ 1 mA t = 1 s 3000 V~
I
ISOL
Mounting torque 1.5/13 Nm/lb.in.
d
Terminal connection torque 1.5/13 Nm/lb.in.
VGS= 0 V, ID = 3 mA 1000 V
VDS= VGS, ID = 8mA 3.0 5.0 V
VGS= ±20V, VGS = 0V ±100 nA
VDS= V
DSS
= 0 V TJ = 125°C2mA
V
GS
VGS= 10V, ID = 0.5 • I
Note 2 24N100 0.39 Ω
D25
DSS
-55 ... +150 °C
150 °C
-55 ... +150 °C
TJ = 25°C 100 µA
23N100 0.43 Ω
5 V/ns
ΩΩ
Ω
ΩΩ
ΩΩ
Ω
ΩΩ
≤ ≤
≤ 250 ns
≤ ≤
êê
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate D = Drain
S = Source
bбнЬЙк=pзмкЕЙ=нЙкгбе~д=~н=гбеб_il`=Е~е=ДЙ=млЙЗ
~л=j~бе=зк=hЙдобе=pзмкЕЙ
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R
HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
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VURVTa= ENMLMMF
IXFN 23N100
IXFN 24N100
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified) Min. Typ. Max.
(T
J
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 0.5 • I
, Note 2 15 22 S
D25
7000 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 750 pF
260 pF
35 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
35 ns
RG= 1 Ω (External), 75 ns
21 ns
250 n C
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
55 n C
135 n C
0.21 K/W
0.05 K/W
Source-Drain Diode
(TJ = 25°C, unless otherwise specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
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jáåK j~ñK jáåK j~ñK
^ PNKRM PNKUU NKOQM NKORR
_ TKUM UKOM MKPMT MKPOP
` QKMV QKOV MKNSN MKNSV
a QKMV QKOV MKNSN MKNSV
b QKMV QKOV MKNSN MKNSV
c NQKVN NRKNN MKRUT MKRVR
d PMKNO PMKPM NKNUS NKNVP
e PUKMM PUKOP NKQVS NKRMR
g NNKSU NOKOO MKQSM MKQUN
h UKVO VKSM MKPRN MKPTU
i MKTS MKUQ MKMPM MKMPP
j NOKSM NOKUR MKQVS MKRMS
k ORKNR ORKQO MKVVM NKMMN
l NKVU OKNP MKMTU MKMUQ
m QKVR RKVT MKNVR MKOPR
n OSKRQ OSKVM NKMQR NKMRV
o PKVQ QKQO MKNRR MKNTQ
p QKTO QKUR MKNUS MKNVN
q OQKRV ORKMT MKVSU MKVUT
r JMKMR MKN JMKMMO MKMMQ
I
S
I
SM
V
SD
VGS= 0 = 24N100 24 A
Repetitive; 24N100 96 A
pulse width limited by T
JM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
Q
RM
I
RM
kзнЙлW=NK=mмдлЙ=пбЗнЬ=дбгбнЙЗ=Ду=q
IF = IS, -di/dt = 100 A/µs, VR = 100 V 1.0 µC
gjK
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %K
23N100 23 A
OPkNMM 92 A
250 n s
8 A
IXYS reserves the right to change limits, test conditions, and dimensions.
fuvp=jlpcbqp=~еЗ=fd_qл=~кЙ=ЕзоЙкЙЗ=Ду=зеЙ=зк=гзкЙ=зС=нЬЙ=СзддзпбеЦ=rKpK=й~нЙенлW QIUPRIRVO QIUUNINMS RIMNTIRMU RIMQVIVSN RINUTINNT RIQUSITNR
QIURMIMTO QIVPNIUQQ RIMPQITVS RIMSPIPMT RIOPTIQUN RIPUNIMOR
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