IXYS IXFN21N100Q Datasheet
HiPerFET
TM
IXFN 21N100Q
Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ V
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight 30 g
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGS = 1 MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 21 A
TC= 25°C, pulse width limited by T
TC= 25°C21A
TC= 25°C 60mJ
T
≤ 150°C, RG = 2 Ω
J
TC= 25°C 520 W
50/60 Hz, RMS t = 1 min 2500 V~
I
≤ 1 mA t = 1 s 3000 V~
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
JM
, 5 V/ns
DSS
-55 to +150 °C
150 °C
-55 to +150 °C
84 A
2.5 J
V
DSS
I
D25
R
DS(on)
≤ ≤
t
≤ 250 ns
≤ ≤
rr
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•IXYS advanced low Q
= 1000 V
= 21 A
= 0.50
S
G
D
process
g
ΩΩ
Ω
ΩΩ
S
•Low gate charge and capacitances
- easier to drive
-faster switching
•Unclamped Inductive Switching (UIS)
rated
•Low R
DS (on)
•Fast intrinsic diode
•International standard package
•miniBLOC with Aluminium nitride
isolation for low thermal resistance
•Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
•Molding epoxies meet UL 94 V-0
flammability classification
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
© 2001 IXYS All rights reserved
VGS= 0 V, ID = 1 m A 1000 V
VDS= VGS, ID = 1.5 mA 2.5 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA
VDS= V
VGS= 0 V TJ = 125°C2mA
VGS= 10 V, ID = 0.5 I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
DSS
D25
100 µA
0.50 Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
98762A (12/01)
IXFN 21N100Q
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
t
d(on)
t
r
18
t
d(off)
t
f
Q
Q
Q
R
R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
VDS= 20 V; ID = 0.5 • I
, pulse test 16 22 S
D25
5900 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 550 pF
90 pF
21 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
18 ns
RG= 1 Ω (External) 60 ns
12 ns
170 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
38 nC
75 nC
0.24 K/W
0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
VGS= 0 V 21 A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
I
SM
V
SD
t
rr
Q
RM
I
RM
Repetitive; pulse width limited by T
JM
IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = IS, -di/dt = 100 A/µs, VR = 100 V 1.4 µC
84 A
250 n s
8A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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