IXYS IXFN170N10, IXFK170N10 Datasheet
HiPerFET
TM
V
DSS
I
D25
R
DS(on)
t
rr
Power MOSFET
IXFN170N10 100V 170A 10mW 200ns
IXFK170N10 100V 170A 10mW 200ns
Single MOSFET Die
Preliminary data
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D125
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
TJ= 25°C to 150°C 100 100 V
TJ= 25°C to 150°C 100 100 V
Continuous ±20 ±20 V
Transient ±30 ±30 V
TC = 25°C 170 170 A
TC = 125°C 76NA
TC = 25°C 680 680 A
TC = 25°C 170 170 A
TC= 25°C 6060mJ
£ IDM, di/dt £ 100 A/ms, VDD £ V
S
T
£ 150°C, RG = 2 W
J
DSS
TC= 25°C 560 600 W
1.6 mm (0.063 in) from case for 10 s 300 N/A °C
50/60 Hz, RMS t = 1 min N/A 2500 V~
£ 1 mA t = 1 s N/A 3000 V~
I
ISOL
Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque N/A 1.5/13 Nm/lb.in.
Weight 10 30 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)VGS
VGS= 0 V, ID = 3mA 100 V
V
temperature coefficient 0.077 %/K
DSS
V
= VGS, ID = 8mA 2 4 V
DS
V
temperature coefficient -0.183 %/K
GS(th)
VGS= ±20V, VGS = 0V ±200 nA
VDS= 0.8 • V
= 0 V TJ = 125°C2mA
V
GS
= 10 V, ID = 0.5 • I
V TJ = 25°C 400 mA
DSS
D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
IXFK IXFN
170N10 170N10
5 5 V/ns
-55 ... +150°C
150 °C
-55 ... +150°C
10 mW
TO-264 AA (IXFK)
G
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard packages
· Encapsulating epoxy meets
UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride
isolation
· Low R
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
D
S
G
D (TAB)
S
S
D
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97505D (7/00)
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IXFK170N10 IXFN170N10
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
thJC
thCK
VDS= 10 V; ID = 0.5 • I
, pulse test 65 S
D25
10,300 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 2,200 pF
1,200 pF
40 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
90 ns
RG= 1 W (External), 158 ns
79 ns
515 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
62 nC
276 nC
TO-264 AA 0.22 K/W
TO-264 AA 0.15 K/W
miniBLOC, SOT-227 B 0.21 K/W
miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode
(TJ = 25°C, unless otherwise specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.
I
S
I
SM
VGS= 0 170 A
Repetitive; 680 A
pulse width limited by T
JM
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
miniBLOC, SOT-227 B
V
SD
IF = 100 A, VGS = 0 V, 1.5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
Q
RM
I
RM
Notes: 1.R
IF = 50 A, -di/dt = 100 A/ms, VR = 100 V 1.1 mC
= 1 MW
GS
2.Pulse width limited by T
3.Chip capability
4.Current limited by external leads
© 2000 IXYS All rights reserved
175 ns
12.6 A
JM.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0. 1 -0.002 0.004
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