IXYS IXFN150N15 Datasheet
HiPerFET
TM
IXFN 150N15 V
DSS
= 150 V
Power MOSFET
Single MOSFET Die
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ V
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight 30 g
TJ= 25°C to 150°C 150 V
TJ= 25°C to 150°C, RGS = 1MW 150 V
Continuous ±20 V
Transient ±30 V
TC = 25°C 150 A
Terminal (current limit) 100 A
T
= 25°C; Note 1 600 A
C
TC = 25°C 1 50 A
TC= 25°C 60mJ
TC= 25°C 3 J
5 V/ns
£ 150°C, RG = 2 W
T
J
DSS
TC = 25°C 600 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
1.6 mm (0.063 in) from case for 10 s 300 °C
50/60 Hz, RMS t = 1 min 2500 V~
£ 1 mA t = 1 s 3000 V~
I
ISOL
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
I
D25
R
DS(on)
= 150 A
= 12.5 mW
trr £ 250 ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard package
· Encapsulating epoxy meets
UL 94 V-0, flammability classification
· miniBLOC with Aluminium nitride
isolation
· Low R
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
HDMOSTM process
DS (on)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)VGS
VGS= 0 V, ID = 3mA 150 V
V
= VGS, ID = 8mA 2 4 V
DS
VGS= ±20V, VGS = 0V ±100 nA
VDS= V
DSS
= 0 V TJ = 125°C2mA
V
GS
= 10V, ID = 0.5 • I
D25
TJ = 25°C 100 mA
12.5 mW
Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
98653 (9/99)
1 - 2
IXFN 150N10
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
fs
iss
oss
rss
d(on)
r
d(off)
f
g(on)
gs
gd
thJC
thCK
VDS= 10 V; ID = 60A, Note 2 50 75 S
9100 pF
VGS= 0 V, VDS = 25 V, f = 1 MHz 2600 pF
1200 pF
50 ns
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
60 ns
RG= 1 W (External), 11 0 ns
45 ns
360 nC
VGS= 10 V, VDS = 0.5 • V
, ID = 0.5 • I
DSS
D25
65 nC
190 nC
miniBLOC, SOT-227 B 0.21 K/W
miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode
(TJ = 25°C, unless otherwise specified) Characteristic Values
Symbol Test Conditions Min. Typ. Max.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
I
S
I
SM
V
SD
VGS= 0 150 A
Repetitive; 600 A
pulse width limited by T
JM
IF = 100 A, VGS = 0 V, 1. 5 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t
rr
Q
RM
I
RM
IF = 50 A, -di/dt = 100 A/ms, VR = 50 V 1.1 mC
Notes: 1 .Pulse width limited by T
2.Pulse test, t £ 300 ms, duty cycle d £ 2 %
250 ns
13 A
JM.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 2
Loading...