IXYS IXFN100N10S3, IXFN100N10S2, IXFN100N10S1 Datasheet
HiPerFET
TM
Power MOSFETs
with Schottky Diodes
m~к~ддЙдI=_мЕв=C==_ззлн=`зеСбЦмк~нбзел
Сзк=pjmpI=mc`=C=jзнзк=`зенкзд=`бкЕмбнл
IXFN 100N10S1
IXFN 100N10S2
IXFN 100N10S3
S1
QEaF
NEdF
NEdF
S2
V
I
R
QEaF
DSS
D25
DS(on)
= 100 V
= 100 A
= 15 m
S3
PEhF
NEdF
QEaF
ΩΩ
Ω
ΩΩ
PE^F
OIPEpF
Symbol Test Conditions Maximum Ratings
HiPerFET MOSFETDiodeCase
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt f
P
D
V
RRM
I
RMS
I
FAVM
I
FRM
(dv/dt)
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
q
=Z=OR°`=íç=NRM°` NMM s
g
q
=Z=OR°`=íç=NRM°`X=odp=Z=N=jΩ NMM s
g
`зенбемзмл ±OM s
qк~елбЙен ±PM s
q
=Z=OR°` NMM ^
`
q
=Z=OR°`I QMM ^
`
ймдлЙ=пбЗнЬ=дбгбнЙЗ=Ду=г~сK=q
q
=Z=OR°` NMM ^
`
gj
oЙйЙнбнбоЙ QR ãg
=≤=fajI=JÇáLÇí=≤=NMM=^LµëI=saa=≤=s
p
q
=≤=NRM°`I=od=Z=O=Ω
g
q
=Z=OR°` PSM t
`
I R sLåë
app
NMM s
NMM ^
q
=Z=NMR°`X=êÉÅí~åÖìä~êI=Ç=Z=MKR ================SM ^
`
í
=YNM=µлX=ймдлЙ=пбЗнЬ=дбгбнЙЗ=Ду=q
m
CR
q
=Z=OR°` NRM t
`
====================TMM ====^
J
JQM=KKK=HNRM °`
NRM °`
JQM=KKK=HNRM °`
RMLSM=eòI=ojp í=Z=N=ãáå ORMM sú
f
=≤=N=ã^ í=Z=N=ë PMMM sú
fpli
jзменбеЦ=нзкимЙ NKRLNP kгLдДKбеK
qЙкгбе~д=ЕзееЙЕнбзе=нзкимЙ=EjQF NKRLNP kãLäÄKáåK
Weight PM Ö
N sLåë
OEpF
OEpF
miniBLOC, SOT-227 B
E153432
p
d
^Lh
a
p=Z=pзмкЕЙ a=Z=aê~áå
d=Z=d~íÉ ^= Z=^åçÇÉ
h=Z=`~нЬзЗЙ
Features
8 mзймд~к=_мЕв=C=_ззлн=ЕбкЕмбн
нзйздзЦбЙл
8 iзп=sc=pЕЬзннву=ЗбзЗЙ=пбнЬ=оЙку=лг~дд
лпбнЕЬбеЦ=дзллЙл
8 fенЙке~нбзе~д=лн~еЗ~кЗ=й~Ев~ЦЙ
ãáåá_il`= plqJOOT_
8 ^дмгбебмг=ебнкбЗЙ=блзд~нбзе
J ЬбЦЬ=йзпЙк=Збллбй~нбзе
8 fлзд~нбзе=оздн~ЦЙ=PMMM=sъ
8 iзп=o
8 oмЦЦЙЗ=йздулбдбЕзе=Ц~нЙ=ЕЙдд=лнкмЕнмкЙ
=eajlpqj=йкзЕЙлл
ap=EçåF
8 içï=Çê~áåJíçJÅ~ëÉ=Å~é~Åáí~åÅÉ
EYSM=écF
J кЙЗмЕЙЗ=ocf
Applications
8 pjmpI=йзпЙк=С~Ензк=Езенкздл=~еЗ
ДмЕв=кЙЦмд~нзкл
8 a`=лЙкоз=~еЗ=кзДзнбЕ=ЗкбоЙл
8 a`= ЕЬзййЙкл
8 pпбнЕЬ=кЙдмЕн~еЕЙ=гзнзк=Езенкздл
Advantages
8 b~лу=нз=гзмен=пбнЬ=O=лЕкЙпл
8 pй~ЕЙ=л~обеЦл
8 qбЦЬнду=ЕзмйдЙЗ=pЕЬзннву=ЗбзЗЙ
«=OMMM= fuvp=^дд= кбЦЬнл=кЙлЙкоЙЗ
VUSQM^= ENOLMMF
IXFN 100N10S1 IXFN 100N10S2
IXFN 100N10S3
Symbol Test Conditions Characteristic Values
Eq
=Z=OR°`X=медЙлл=знЬЙкпблЙ=лйЙЕбСбЙЗF
V
V
I
I
R
g
C
C
DSS
GS(th)
GSS
DSS
DS(on)
fs
iss
oss
g
sdpZ=M=sX=fa=Z=P=ã^ pN NMM s
sdpZ=M=sX=f
=Z=ORM=µ^ pOLpP NMM s
a
sapZ=sdpX=fa=Z=Q=ã^ O Q s
s
Z=±OM=s
dp
sapZ=s
=q
=Z=NOR°`pNOMã^
g====
sdpZ=NM=sX=fa=Z=MKR==f
sapZ=NM=sX=fa=Z=MKR=f
X=s
=Z=M ±NMM å^
a`
ap
X=sdp=Z=M=s pN O ã^
app
pOLpP OR µΑ
pOLpP N ã^
X=kçíÉ=N NR ãΩ
aOR
X=ймдлЙ=нЙлн PM QR p
aOR
sdp==Z=M=sX=sap=Z=OR=sX=Ñ=Z=N=jeò QRMM éc
pN NVMM éc
min. typ. max.
pOLpP NSMM éc
C
t
t
t
t
Q
Q
Q
V
t
Q
I
RM
R
R
rss
d(on)
r
d(off)
f
g(on)
gs
gd
SD
rr
RM
thJC
thCK
sdpZ=NM=sX=sap=Z=MKR=s
o
Z=NKR Ω=EbснЙке~дF NMM åë
d
sdpZ=NM=sX=sap=Z=MKR==s
X=fa=Z=MKR=f
app
X=fa=Z=MKR==f
app
aOR
aOR
fc=Z=NMM^X=sdp=Z=M=sX=kçíÉ=N=EpOI=pPF NKR s
f
=Z=OR=^XJÇáLÇí=Z=NMM=^LµëX=s
c
=Z=OR=s OMM åë
o
UTM éc
PM åë
TM åë
PM åë
NUM å`
PS å`
VR å`
MKU µ`
S^
MKPR =hLt
MKMR hLt
miniBLOC, SOT-227 B
jQ=лЕкЙпл=EQсF= лмййдбЙЗ
aáãK jбддбгЙнЙк fеЕЬЙл
jáåK j~ñK jáåK j~ñK
^ PNKRM PNKUU NKOQM NKORR
_ TKUM UKOM MKPMT MKPOP
` QKMV QKOV MKNSN MKNSV
a QKMV QKOV MKNSN MKNSV
b QKMV QKOV MKNSN MKNSV
c NQKVN NRKNN MKRUT MKRVR
d PMKNO PMKPM NKNUS NKNVP
e PUKMM PUKOP NKQVS NKRMR
g NNKSU NOKOO MKQSM MKQUN
h UKVO VKSM MKPRN MKPTU
i MKTS MKUQ MKMPM MKMPP
j NOKSM NOKUR MKQVS MKRMS
k ORKNR ORKQO MKVVM NKMMN
l NKVU OKNP MKMTU MKMUQ
m QKVR RKVT MKNVR MKOPR
n OSKRQ OSKVM NKMQR NKMRV
o PKVQ QKQO MKNRR MKNTQ
p QKTO QKUR MKNUS MKNVN
q OQKRV ORKMT MKVSU MKVUT
r JMKMR MKN JMKMMO MKMMQ
Schottky Diode Characteristic Values
Eq
=Z=OR°`I=медЙлл=знЬЙкпблЙ=лйЙЕбСбЙЗF
Symbol Test Conditions min. typ. max.
I
R
V
F
so=Z=s
ooj
q
Z=NOR°`X=s
g=
o=
Z=s
ooj
fc=Z=SM=^X sdp=Z=M=sX=kçíÉ=N MKUS s
fc=Z=SM=^X sdp=Z=M=s q
fc=Z=NOM=^ q
R
thJC
R
thJK
IXYS reserves the right to change limits, test conditions, and dimensions.
fuvp=jlpcbqp=~еЗ=fd_qл=~кЙ=ЕзоЙкЙЗ=Ду=зеЙ=зк=гзкЙ=зС=нЬЙ=СзддзпбеЦ=rKpK=й~нЙенлW QIUPRIRVO QIUUNINMS RIMNTIRMU RIMQVIVSN RINUTINNT RIQUSITNR
g
==O ã ^
OM ã^
Z= NOR°` MKTP s
g=
Z= NOR°` MKVP s
g=
=MKU hLt
MKN hLt
QIURMIMTO QIVPNIUQQ RIMPQITVS RIMSPIPMT RIOPTIQUN RIPUNIMOR
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