IXYS IXFM10N100, IXFM12N100, IXFH10N100, IXFH12N100 Datasheet

IXFH 10N100 IXFM 10N100 IXFH 12N100 IXFM 12N100
HiPerFET Power MOSFETs
TM
IXFH/FM 10N100 1000 V 10 A 1.20 250 ns IXFH/FM 12N100 1000 V 12 A 1.05 250 ns
N-Channel Enhancement Mode High dv/dt, Low t
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt I
P
D
T
J
T
JM
T
stg
M
d
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 1000 V TJ= 25°C to 150°C; RGS = 1 M 1000 V
Continuous ±20 V Transient ±30 V
TC= 25°C 10N100 10 A
TC= 25°C, pulse width limited by T
TC= 25°C 10N100 10 A
TC= 25°C30mJ
S
T
J
TC= 25°C 300 W
Mounting torque 1.13/10 Nm/lb.in.
, HDMOSTM Family
rr
IDM, di/dt 100 A/µs, VDD V
150°C, RG = 2
12N100 12 A 10N100 40 A
JM
12N100 48 A
12N100 12 A
, 5 V/ns
DSS
-55 ... +150 °C 150 °C
-55 ... +150 °C
V
DSS
I
D25
R
DS(on)
t
rr
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G
D
G = Gate D = Drain S = Source TAB = Drain
Features
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
HDMOSTM process
DS (on)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
VGS= 0 V, ID = 3 mA 1000 V VDS= VGS, ID = 4 mA 2.0 4.5 V
VGS= ±20 VDC, VDS = 0 ±100 nA VDS= 0.8 V
= 0 V TJ = 125°C1mA
V
GS
VGS= 10 V, ID = 0.5 I
DSS
J
TJ =25°C 250 µA
D25
10N100 1.20 12N100 1.05
Min. Typ. Max.
Pulse test, t 300 µs, duty cycle δ ≤ 2 %
©1995 IXYS Corporation. All rights reserved.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
91531D (10/95)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
IXFH 10N100 IXFM 10N100 IXFH 12N100 IXFM 12N100
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g C
C C
t
d(on)
t
r
t
d(off)
t
f
Q Q Q
R R
fs
iss
oss
rss
g(on)
gs
gd
thJC
thCK
J
VDS= 10 V; ID = 0.5 I
, pulse test 6 10 S
D25
VGS= 0 V, VDS = 25 V, f = 1 MHz 310 pF
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
RG = 2 (External), 62 100 ns
VGS= 10 V, VDS = 0.5 V
, ID = 0.5 I
DSS
Min. Typ. Max.
D25
D25
4000 pF
70 pF 21 50 ns
33 50 ns
32 50 ns
122 155 nC
30 45 nC 50 80 nC
0.42 K/ W
0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
TO-247 AD (IXFH) Outline
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
VGS= 0 10N100 10 A
12N100 12 A
Repetitive; 10N100 40 A pulse width limited by T
JM
12N100 48 A
IF = IS, VGS = 0 V, 1.5 V Pulse test, t 300 µs, duty cycle δ ≤ 2 %
TJ =25°C 250 ns T
= 125°C 400 ns
IF = I
S
-di/dt = 100 A/µs, = 100 V
V
R
J
TJ =25°C1µC T
= 125°C2µC
J
TJ =25°C10A
= 125°C15A
T
J
TO-204 AA (IXFM) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS Corporation 3540 Bassett Street, Santa Clara,CA 95054 Tel: 408-982-0700 Fax: 408-496-0670
Edisonstr. 15, D-68623 Lampertheim, Germany
IXYS Semiconductor
Tel: +49-6206-5030 Fax: +49-6206-503629
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